Abstract
Metal/semiconductor structures are of interest in several fields including thin-film magnetism, electronics, and x-ray optics. Well controlled and characterized interfaces are crucial for the understanding of the properties of nanostructured materials. We describe techniques used to grow and characterize three such material systems: Co/Pd on GaAs(110) (using a bcc-Co seed layer), Co on Si(111), and Mo on Si(111).
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Slaughter, J.M., Engel, B.N., Wiedmann, M.H., Kearney, P.A., Falco, C.M. (1991). MBE Growth of Metal/Semiconductor Interfaces. In: Hadjipanayis, G.C., Prinz, G.A. (eds) Science and Technology of Nanostructured Magnetic Materials. NATO ASI Series, vol 259. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2590-9_8
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DOI: https://doi.org/10.1007/978-1-4899-2590-9_8
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