Zusammenfassung
Wie in Gas- und optisch gepumpten Festkörperlasern kann auch in bestimmten Halbleitern eine Lichtemission induziert und bei Rückkopplung der entstehenden Strahlung ein Laser realisiert werden. Die wesentlichen Unterschiede, die eine gesonderte Behandlung des Halbleiterlasers erfordern, beruhen auf der Art der Elektronenzustände. Während diese bei den anderen Lasern in der Energieskala ein Spektrum schmaler Linien darstellen, sind beim Halbleiter breite Energiebänder vorhanden. Dieser Sachverhalt führt vor allem zu einer relativ großen Breite der spontanen Emissionslinie und damit nach der Schawlow-Townes-Bedingung (vgl. Gl. 7.3/5) zu einer sehr hohen Schwellenleistung für eine optische Anregung.
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Literatur zu den Tabellen 7.1a-c
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Allgemeine Einführungen in die Halbleiterphysik und -technologie unter besonderer Berücksichtigung optischer Eigenschaften
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Winstel, G.H. (1969). Der Halbleiterlaser. In: Kleen, W., Müller, R. (eds) Laser. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-87266-2_7
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