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Disorder, electron-electron interactions and the metal-insulator transition in heavily doped Si:P

  • Correlations and Disorder
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Advances in Solid State Physics 40

Part of the book series: Advances in Solid State Physics ((ASSP,volume 40))

Abstract

Electron localization in a metal, ultimately leading to a metal-insulator (MI) transition, can occur because of disorder (Anderson transition) or electron-electron interactions (Mott-Hubbard transition). Both effects play a role in heavily doped semiconductors which have become prototype systems for the study of MI transitions. In this review we focus on phosphorus-doped Si. The statistical distribution of donor atoms on an atomic scale as the origin of random disorder can be checked by scanning tunneling microscopy. Long-range Coulomb interactions lead to Altshuler-Aronov corrections to the density of states N(E F) at the Fermi level and the electrical conductivity σ(T) on the metallic side of the MI transition, and to a soft Coulomb gap at E F and Efros-Shklovskii variable-range hopping on the insulating side. On-site Coulomb interactions, on the other hand, lead to the formation of localized magnetic moments and the Kondo effect on the metallic side, and to a Hubbard splitting of the donor band on the insulating side. The MI transition in Si:P can be tuned by varying the P concentration or—for barely insulating samples—by application of uniaxial stress S. The continuous stress tuning allows the observation of dynamic scaling of σ(T, S) and hence a reliable determination of the critical exponent μ of the extrapolated zero-temperature conductivity σ(0)∼|S—S c |μ, i.e.μ=1, and of the dynamical exponent z=3.

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  1. Physikalisches Institut, Universität Karlsruhe, D-76128, Karlsruhe

    Hilbert v. Löhneysen

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  1. Hilbert v. Löhneysen
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Bernhard Kramer

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© 2000 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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v. Löhneysen, H. (2000). Disorder, electron-electron interactions and the metal-insulator transition in heavily doped Si:P. In: Kramer, B. (eds) Advances in Solid State Physics 40. Advances in Solid State Physics, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108351

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  • DOI: https://doi.org/10.1007/BFb0108351

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