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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 21/2018

07.09.2018

Characteristics and microwave dielectric properties of low loss MgZr0.85Sn0.15Nb2O8 ceramics

verfasst von: Mi Xiao, Jie Lou, Ping Zhang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 21/2018

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Abstract

MgZr0.85Sn0.15Nb2O8 ceramics with wolframite structure were synthesized through traditional solid-state reaction process. X-ray diffraction and scanning electron microscopy were used to analyze the phase and surface morphology. Bond ionicity, lattice energy and bond energy were calculated separately to investigate the correlations with microwave dielectric properties. Typically, optimal microwave dielectric properties were obtained at 1260 °C: εr = 24.91, Q × f = 94014 GHz, τf=− 43.93 ppm/oC.
Vorheriger Artikel A low temperature die attach technique for high temperature applications based on indium infiltrating micro-porous Ag sheet
Nächster Artikel Phase controllable synthesis of NaMgF3:Yb3+, Er3+ nanocrystals with effective red upconversion luminescence

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Metadaten
Titel
Characteristics and microwave dielectric properties of low loss MgZr0.85Sn0.15Nb2O8 ceramics
verfasst von
Mi Xiao
Jie Lou
Ping Zhang
Publikationsdatum
07.09.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 21/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9945-8

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