2014 | OriginalPaper | Buchkapitel
Characterization of AlGaN Thickness and Sheet Carrier Concentration of AlGaN/GaN Based HEMT Using Electrical Measurement
verfasst von : Henika Arora, D. S. Rawal, B. K. Sehgal
Erschienen in: Physics of Semiconductor Devices
Verlag: Springer International Publishing
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We present a simple non-destructive technique to characterize the AlGaN barrier layer thickness and sheet carrier concentration for AlGaN/GaN heterostructure. Characterization of AlGaN thickness and sheet carrier concentration has been carried out for AlGaN/GaN HEMT structure using the capacitance–voltage characterization of FATHEMT (dimension Lg = 20 µm, Wg = 150 µm). The estimated values for AlGaN thickness and the sheet carrier concentration (n
s
) were ~23.2 nm and ~1e13/cm
2
respectively for MBE grown structure. The estimated values of AlGaN thickness are fairly matching well with measured data of HRXRD within variation of ±5 % and the estimated sheet carrier concentration values are also of the same order as evaluated using Hall Measurement.