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Erschienen in:
1996 | OriginalPaper | Buchkapitel
Characterization Techniques
verfasst von : Prof. Dr. Marian A. Herman, Dr. Helmut Sitter
Erschienen in: Molecular Beam Epitaxy
Verlag: Springer Berlin Heidelberg
Enthalten in: Professional Book Archive
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The experimental arrangement of MBE is unique among epitaxial thin film preparation methods in that it enables one to study and control the growth process in situ in several ways. In particular, Reflection High Energy Electron Diffraction (RHEED) allows direct measurements of the surface structure of the substrate wafer and the already grown epilayer. It also allows observation of the dynamics of MBE growth [4.1–30]. The forward scattering geometry of RHEED is most appropriate for MBE, since the electron beam is at grazing incidence (Fig. 3.29), whereas the molecular beams impinge almost normally on the substrate. Therefore, RHEED may be called an in-growth surface and analytical technique.