Skip to main content
Erschienen in:
Buchtitelbild

2016 | OriginalPaper | Buchkapitel

CMOS Image Sensor for Smart Cameras

verfasst von : JongHo Park

Erschienen in: Theory and Applications of Smart Cameras

Verlag: Springer Netherlands

Aktivieren Sie unsere intelligente Suche um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

A smart camera is a vision system with special features implemented to achieve its specific purpose. A smart camera which can be used for security or surveillance purpose requires high dynamic range of the sensor to cover broad illumination range of the scene. A stick- or badge-type smart camera operates as a stand-alone device so that the power consumption is one of the most important parameters. For applications such as nondestructive inspection using infrared (IR), sensitivity of the image sensors should be improved to obtain suitable SNR for reliable output. This chapter describes basic imaging principles and dynamic range expansion methods of the CMOS image sensors.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literatur
1.
Zurück zum Zitat Hynecek J (2002) High dynamic range active pixel CMOS image sensor and data processing system incorporating adaptive pixel reset, U.S. Patent, 0113886 A1 Hynecek J (2002) High dynamic range active pixel CMOS image sensor and data processing system incorporating adaptive pixel reset, U.S. Patent, 0113886 A1
2.
Zurück zum Zitat Meynants G, Dierickx B, Scheffer D (1998) CMOS active pixel image sensor with CCD performance. Proc SPIE 3410:68–76CrossRef Meynants G, Dierickx B, Scheffer D (1998) CMOS active pixel image sensor with CCD performance. Proc SPIE 3410:68–76CrossRef
3.
Zurück zum Zitat Mendis SK, Kemeny SE, Gee RC, Pain B, Staller CO, Kim Q, Fossum ER (1997) CMOS Active pixel image sensors for highly integrated imaging systems. IEEE J Solid-State Circuits 32(2):187–197CrossRef Mendis SK, Kemeny SE, Gee RC, Pain B, Staller CO, Kim Q, Fossum ER (1997) CMOS Active pixel image sensors for highly integrated imaging systems. IEEE J Solid-State Circuits 32(2):187–197CrossRef
4.
Zurück zum Zitat Yasuda T, Hamamoto T, Aizawa K (2003) Adaptive-integration-time image sensor with real-time reconstruction function. IEEE Trans Electron Devices 50(1):111–120CrossRef Yasuda T, Hamamoto T, Aizawa K (2003) Adaptive-integration-time image sensor with real-time reconstruction function. IEEE Trans Electron Devices 50(1):111–120CrossRef
5.
Zurück zum Zitat Theuwissen AJP (1995) Solid-State Imaging with Charge-Coupled Devices. Kluwer Academic Publishers, Dordrecht Theuwissen AJP (1995) Solid-State Imaging with Charge-Coupled Devices. Kluwer Academic Publishers, Dordrecht
6.
Zurück zum Zitat Hardy T, Murowinski R, Deen MJ (1998) Charge transfer efficiency in proton damaged CCD’s. IEEE Trans Nuclear Sci 45(2):154–163CrossRef Hardy T, Murowinski R, Deen MJ (1998) Charge transfer efficiency in proton damaged CCD’s. IEEE Trans Nuclear Sci 45(2):154–163CrossRef
7.
Zurück zum Zitat Yonemoto K, Sumi H (2000) A CMOS image sensor with a simple fixed-pattern-noise-reduction technology and a hole accumulation diode. IEEE J Solid-State Circuits 35(12):2038–2043CrossRef Yonemoto K, Sumi H (2000) A CMOS image sensor with a simple fixed-pattern-noise-reduction technology and a hole accumulation diode. IEEE J Solid-State Circuits 35(12):2038–2043CrossRef
8.
Zurück zum Zitat Hynecek J (2002) CDS noise reduction of partially reset charge-detection nodes. IEEE Trans Circuits Syst 49(3):276–280CrossRef Hynecek J (2002) CDS noise reduction of partially reset charge-detection nodes. IEEE Trans Circuits Syst 49(3):276–280CrossRef
9.
Zurück zum Zitat Tian H, Gamal AE (2001) Analysis of 1/f noise in switched MOSFET circuits. IEEE Trans Circuits Syst 48(2):151–157CrossRefMATH Tian H, Gamal AE (2001) Analysis of 1/f noise in switched MOSFET circuits. IEEE Trans Circuits Syst 48(2):151–157CrossRefMATH
10.
Zurück zum Zitat Kawai N, Kawahito S (2004) Noise Analysis of high-gain, low-noise column readout circuits for CMOS image sensors. IEEE Trans Electron Devices 51(2):185–194CrossRef Kawai N, Kawahito S (2004) Noise Analysis of high-gain, low-noise column readout circuits for CMOS image sensors. IEEE Trans Electron Devices 51(2):185–194CrossRef
11.
Zurück zum Zitat Furumiya M, Ohkubo H, Muramatsu Y, Kurosawa S, Okamoto F, Fujimoto Y, Nakashiba Y (2001) High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor. IEEE Trans Electron Devices 48(10):2221–2227CrossRef Furumiya M, Ohkubo H, Muramatsu Y, Kurosawa S, Okamoto F, Fujimoto Y, Nakashiba Y (2001) High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor. IEEE Trans Electron Devices 48(10):2221–2227CrossRef
12.
Zurück zum Zitat Tian H, Fowler B, Gamal AE (1999) Analysis of temporal noise in CMOS APS. Proceedings of SPIE, vol 3649. San Jose, pp 177–185 Tian H, Fowler B, Gamal AE (1999) Analysis of temporal noise in CMOS APS. Proceedings of SPIE, vol 3649. San Jose, pp 177–185
13.
Zurück zum Zitat Tian H, Fowler B, Gamal AE (2001) Analysis of temporal noise in CMOS photodiode active pixel sensor. IEEE J Solid-State Circuits 36(1):92–101CrossRef Tian H, Fowler B, Gamal AE (2001) Analysis of temporal noise in CMOS photodiode active pixel sensor. IEEE J Solid-State Circuits 36(1):92–101CrossRef
14.
Zurück zum Zitat Rodericks B, Hoffberg M (2002) Wide dynamic range digital imaging system and method. PCT Patent, WO 02/103391 A1 Rodericks B, Hoffberg M (2002) Wide dynamic range digital imaging system and method. PCT Patent, WO 02/103391 A1
15.
Zurück zum Zitat Kavadias S, Dierickx B, Scheffer D, Alaerts A, Uwaerts D, Bogaerts J (2000) A logarithmic response CMOS image sensor with on-chip calibration. IEEE J Solid-State Circuits 35(8):1146–1152CrossRef Kavadias S, Dierickx B, Scheffer D, Alaerts A, Uwaerts D, Bogaerts J (2000) A logarithmic response CMOS image sensor with on-chip calibration. IEEE J Solid-State Circuits 35(8):1146–1152CrossRef
16.
Zurück zum Zitat Takanayagi I (2006) Wide dynamic range linear-and-log active pixel. U.S. Patent, 0036785 Takanayagi I (2006) Wide dynamic range linear-and-log active pixel. U.S. Patent, 0036785
17.
Zurück zum Zitat Hara K, Kubo H, Kimura M, Murao F, Komon S (2005) A Linear-logarithmic cmos sensor with offset calibration using an injected charge signal. In: Proceedings of ISSCC, pp 354--603 Hara K, Kubo H, Kimura M, Murao F, Komon S (2005) A Linear-logarithmic cmos sensor with offset calibration using an injected charge signal. In: Proceedings of ISSCC, pp 354--603
18.
Zurück zum Zitat Decker S, McGrath RD, Brehmer K, Sodini CG (1998) A 256 × 256 CMOS Imaging array with wide dynamic range pixels and column-parallel digital output. IEEE J Solid-State Circuits 33:2081–2091CrossRef Decker S, McGrath RD, Brehmer K, Sodini CG (1998) A 256 × 256 CMOS Imaging array with wide dynamic range pixels and column-parallel digital output. IEEE J Solid-State Circuits 33:2081–2091CrossRef
19.
Zurück zum Zitat Sugawa S, Akahane N, Adachi S, Mori K, Ishiuchi T, Mizobuchi K (2005) A 100 dB dynamic range CMOS Image sensor using a lateral overflow integration capacitor. In: Proceedings of ISSCC, pp 352--353 Sugawa S, Akahane N, Adachi S, Mori K, Ishiuchi T, Mizobuchi K (2005) A 100 dB dynamic range CMOS Image sensor using a lateral overflow integration capacitor. In: Proceedings of ISSCC, pp 352--353
20.
Zurück zum Zitat Yadid-Pecht O, Fossum ER (1997) Wide intrascene dynamic range CMOS APS using dual sampling. IEEE Trans Electron Devices 44(10):1721–1723CrossRef Yadid-Pecht O, Fossum ER (1997) Wide intrascene dynamic range CMOS APS using dual sampling. IEEE Trans Electron Devices 44(10):1721–1723CrossRef
21.
Zurück zum Zitat Nakamura J (2002) Wide dynamic range pinned photodiode active pixel sensor (APS), U.S. Patent, 0096124 A1 Nakamura J (2002) Wide dynamic range pinned photodiode active pixel sensor (APS), U.S. Patent, 0096124 A1
22.
Zurück zum Zitat Mase M, Kawahito S, Sasaki M, Wakamori Y, Furuta M (2005) A Wide dynamic range CMOS image sensor with multiple exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters. IEEE J Solid-State Circuits 40(12):2787–2795CrossRef Mase M, Kawahito S, Sasaki M, Wakamori Y, Furuta M (2005) A Wide dynamic range CMOS image sensor with multiple exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters. IEEE J Solid-State Circuits 40(12):2787–2795CrossRef
23.
Zurück zum Zitat Park JH, Mase M, Kawahito S, Sasaki M, Wakamori Y, Ohta Y (2005) A 142 dB dynamic range CMOS image sensor with multiple exposure time signals. In: Proceedings of ASSCC, Taiwan, vol A2L-3, pp 85–88 Park JH, Mase M, Kawahito S, Sasaki M, Wakamori Y, Ohta Y (2005) A 142 dB dynamic range CMOS image sensor with multiple exposure time signals. In: Proceedings of ASSCC, Taiwan, vol A2L-3, pp 85–88
Metadaten
Titel
CMOS Image Sensor for Smart Cameras
verfasst von
JongHo Park
Copyright-Jahr
2016
Verlag
Springer Netherlands
DOI
https://doi.org/10.1007/978-94-017-9987-4_1

Neuer Inhalt