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2020 | OriginalPaper | Buchkapitel

6. Combinatorial Thin-Film Synthesis for New Nanoelectronics Materials

verfasst von : Takahiro Nagata

Erschienen in: Nanoscale Redox Reaction at Metal/Oxide Interface

Verlag: Springer Japan

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Abstract

In this chapter, the combinatorial synthesis techniques for the development of new thin-film materials for nanoelectronics are briefly introduced. Although this topic is not relating to the oxide thin-film materials directory, for the high-throughput material synthesis and systematic investigation, the combinatorial synthesis technique is effective. In former chapters, these techniques are used and have been effective. In the thin-film synthesis, technically, by combining a moving mask system and a target exchange system with physical thin-film growth methods, a ternary or binary composition spread thin-film sample can be obtained. In particular, in this chapter, combinatorial focused Ar ion-beam sputtering (FIBS), which is optimized for material research on new metal thin films and developed in NIMS, is mainly introduced.

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Vorheriges Kapitel Switching Control of Oxide-Based Resistive Random-Access Memory by Valence State Control of Oxide

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Titel: Combinatorial Thin-Film Synthesis for New Nanoelectronics Materials
verfasst von: Takahiro Nagata
Verlag: Springer Japan
Buch: Nanoscale Redox Reaction at Metal/Oxide Interface
Print ISBN: 978-4-431-54849-2

Electronic ISBN: 978-4-431-54850-8

Copyright-Jahr: 2020
DOI: https://doi.org/10.1007/978-4-431-54850-8_6

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