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Erschienen in:
2007 | OriginalPaper | Buchkapitel
Compact Modeling for New Transistor Structures
verfasst von : C. Hu, M. Dunga, C -H. Lin, D. Lu, A. Niknejad
Erschienen in: Simulation of Semiconductor Processes and Devices 2007
Verlag: Springer Vienna
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Using embedded SRAM as a path, FinFET may enter manufacturing at 32nm. FinFET provides several advantages over the planar MOSFET structure—smaller size, larger current, smaller leakage, and less variation in threshold voltage. A compact model of multi-gate transistors will facilitate their adoption. BSIM-MG is a surface-potential based compact model of multi-gate MOSFETs fabricated on either SOI or bulk substrates. The effects of body doping are modeled. It can also model a double-gate transistor with independently biased front and back gates and asymmetric front and back gate work-functions and dielectric thicknesses.