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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 14/2019

19.06.2019

Comparative study of fabrication and characterization of Al-ZnO based Schottky barrier diodes using Pd and Au metal contacts

verfasst von: Manisha R. Singh, Mohit Sahni, Munendra Singh, Bhaskar Bhattacharya, Naresh Kumar

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 14/2019

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Abstract

This work shows a comparative study of two types of surface barrier diodes (SBDs). RF magnetron sputtering was used to fabricate Al doped ZnO films (Al0.02Zn0.98O) at two different temperatures (100  and 300 °C) and then the structural and optical properties of these thin films were obtained and analyzed using SEM, AFM, XRD, EDX and UV–Vis spectroscopy. Then the heterojunction layers Pd/Al-ZnO/p-Si (SBD1) & Au/Al-ZnO/p-Si (SBD2) were prepared using these Al-ZnO films (developed at both the temperatures). Optical and electrical properties and the effect of temperature on ideality factor, barrier potential and carrier concentration of both the SBDs were also studied.
Vorheriger Artikel High-performance flexible transparent conductive thin films on PET substrates with a CuM/AZO structure
Nächster Artikel Preparation of AlSb film by screen printing and sintering method

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Metadaten
Titel
Comparative study of fabrication and characterization of Al-ZnO based Schottky barrier diodes using Pd and Au metal contacts
verfasst von
Manisha R. Singh
Mohit Sahni
Munendra Singh
Bhaskar Bhattacharya
Naresh Kumar
Publikationsdatum
19.06.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 14/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01691-5

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