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Journal of Materials Science
Erschienen in: Journal of Materials Science 11/2015

01.06.2015 | Original Paper

Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates

verfasst von: Cristina Chirila, Andra Georgia Boni, Iuliana Pasuk, Raluca Negrea, Lucian Trupina, Gwenael Le Rhun, Shi Yin, Bertrand Vilquin, Ioana Pintilie, Lucian Pintilie

Erschienen in: Journal of Materials Science | Ausgabe 11/2015

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Abstract

Ferroelectric/electric properties of PbZr0.52Ti0.48O3 (PZT) thin films grown by pulsed laser deposition (PLD) on two different substrates, Si (001) and SrTiO3 (STO) (001), were comparatively analyzed. The structural characterization has revealed the epitaxial relationship between the grown layers and the two types of substrates, with larger density of structural defects for the films deposited on Si (001) with buffer STO layer. The ferroelectric/electric properties are also different, with lower remnant polarization (about half of the value obtained on STO substrate), higher dielectric constant (about two times larger), and lower leakage current (about two orders of magnitude lower) for the PZT films deposited on Si (001) compared to those deposited on (001) STO substrates. Nevertheless, the results show that the use of a STO buffer layer on Si can be a solution to obtain good quality PZT capacitor structures without using expensive single-crystal oxide substrates. In this way, applications based on PZT capacitors (e.g. non-volatile memories, pyroelectric detectors, light switches, etc.) would be more easily integrated directly on Si wafers.
Vorheriger Artikel Reduced nanostructured titanium oxide coating as an electrocatalyst support for methanol oxidation
Nächster Artikel Study on the surface energies and dispersibility of graphene oxide and its derivatives

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Literatur
1.
Uchino K (2000) Ferroelectric devices. Marcel Dekker, New York
2.
Jaffe B, Cook WR, Jaffe H (1971) Piezoelectric ceramics. Academic Press Inc, London
3.
Kim DM, Eom CB, Nagarajan V, Ouyang J, Ramesh R, Vaithyanathan V, Schlom DG (2006) Thickness dependence of structural and piezoelectric properties of epitaxial Pb(Zr0.52, Ti0.48)O3 films on Si and SrTiO3 substrates. Appl Phys Lett 88:142904CrossRef
4.
Uchino K (1996) Piezoelectric actuators and ultrasonic motors. Kluwer Academic Publishers, BostonCrossRef
5.
Noheda B, Gonzalo JA, Cross LE, Guo R, Park SE, Cox DE, Shirane G (2000) Tetragonal-to-monoclinic phase transition in a ferroelectric perovskite: the structure of Pb(Zr0.52Ti0.48)O3. Phys Rev B 61(13):8687CrossRef
6.
Pintilie L, Vrejoiu I, Hesse D, Le Rhun G, Alexe M (2007) Extrinsic contributions to the apparent thickness dependence of the dielectric constant in epitaxial Pb(Zr, Ti)O3 thin films. Phys Rev B 75(22):224113CrossRef
7.
Pintilie L (2009) Advanced electrical characterization of ferroelectric thin films: facts and artifacts. J Optoelectron Adv Mater 11(3):215
8.
Qin M, Yao K, Liang YC (2009) Photovoltaic characteristics in polycrystalline and epitaxial (Pb0.97 La0.03) (Zr0.52Ti0.48)O3 ferroelectric thin films sandwiched between different top and bottom electrodes. J Appl Phys 105(6):061624CrossRef
9.
Zhu ZX, Li JF (2010) A comparative study of fibre-textured and epitaxial Nb-doped Pb(Zr0.53Ti0.47)O3 thin films on different substrates. Appl Surf Sci 256:3880CrossRef
10.
Vrejoiu I, Le Rhun G, Pintilie L, Hesse D, Alexe M, Gösele U (2006) Intrinsic ferroelectric properties of strained tetragonal Pb(Zr0.2, Ti0.8)O3 obtained on layer–by–layer grown, defect–free single–crystalline films. Adv Mater 18:1657–1661CrossRef
11.
Chen F, Tan X, Huang Z, Xuan X, Wu W (2010) Effect of electrode configurations on the process-induced imprint behavior of epitaxial Pb (Zr0.52Ti0.48)O3 capacitors. Appl Phys Lett 96:262902CrossRef
12.
Khan AI, Yu P, Trassin M, Lee MJ, You L, Salahuddin S (2014) The effects of strain relaxation on the dielectric properties of epitaxial ferroelectric Pb(Zr0.2Ti0.8)TiO3 thin films. Appl Phys Lett 105:022903CrossRef
13.
Nguyen MD, Dekkers M, Houwman E, Steenwelle R, Wan X, Roelofs A, Schmitz-Kempen T, Rijnders G (2011) Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52, Ti0.48)O3 thin films. Appl Phys Lett 99:252904CrossRef
14.
Zhu Y, Yan P, Yi T, Cao L, Li L (1999) Interface diffusion and chemical reaction on the interface of a PZT film/Si(111) sample during annealing treatment in N2 and vacuum. Surf Interface Anal 27:972CrossRef
15.
Lin A, Hong X, Wood V, Verevkin AA, Ahn CH, McKee RA, Walker FJ, Specht ED (2001) Epitaxial growth of Pb.Zr0.2Ti0.8.O3 on Si and its nanoscale piezoelectric properties. Appl Phys Lett 78:2034CrossRef
16.
Basit NA, Kim HK, Blachere J (1998) Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors. Appl Phys Lett 73:3941CrossRef
17.
Wang Y, Ganpule C, Liu BT, Li H, Mori K, Hill B, Wuttig M, Ramesh R, Finder J, Yu Z, Droopad R, Eisenbeiser K (2002) Epitaxial ferroelectric Pb(Zr, Ti)O3 thin films on Si using SrTiO3 template layers. Appl Phys Lett 80:97CrossRef
18.
Horita S, Kawada T, Abe Y (1996) Characterization of Pb(ZrxTi1-x)O3 thin film on silicon Substrate with heteroepitaxial yttria-stabilized zirconia (YSZ) buffer layer. Jpn J Appl Phys 35:L1357CrossRef
19.
Shih WC, Juan PC, Lee JY (2008) Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)–Insulator (Y2O3)–semiconductor field effect transistors for nonvolatile memory applications. J Appl Phys 103:094110CrossRef
20.
Ramesh R, Gilchrist H, Sands T, Keramidas VG, Haakenaasen R, Fork DK (1993) Ferroelectric LaSrCoO/PbZrTiO/LaSrCoO heterostructures on silicon via template growth. Appl Phys Lett 63:3592CrossRef
21.
Eom CB, Van Dover RB, Phillips JM, Werder DJ, Marshall JH, Chen CH, Cava RJ, Fleming RM, Fork DK (1993) Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRu03) isotropic metallic oxide electrodes. Appl Phys Lett 63:2570CrossRef
22.
Hubbard KJ, Schlom DG (1996) Thermodynamic stability of binary oxides in contact with silicon. J Mater Res 11:2757CrossRef
23.
McKee RA, Walker FJ, Chisholm MF (1998) Crystalline oxides on silicon: the first five monolayers. Phys Rev Lett 81:3014CrossRef
24.
Reiner JW, Kolpak AM, Segal Y, Garrity KF, Ismail-Beigi S, Ahn CH, Walker FJ (2010) Crystalline oxides on silicon. Adv Mater 22:2919CrossRef
25.
Niu G, Saint-Girons G, Vilquin B, Delhaye G, Maurice JL, Botella C, Robach Y, Hollinger G (2009) Molecular beam epitaxy of SrTiO3 on Si (001): early stages of the growth and strain relaxation. Appl Phys Lett 95:062902CrossRef
26.
Niu G, Penuelas J, Largeau L, Vilquin B, Maurice JL, Botella C, Hollinger G, Saint-Girons G (2011) Evidence for the formation of two phases during the growth of SrTiO3 on silicon. Phys Rev B 83:054105CrossRef
27.
Schmidbauer M, Kwasniewski A, Schwarzkopf J (2012) High-precision absolute lattice parameter determination of SrTiO3, DyScO3 and NdGaO3 single crystals. Acta Crystallogr B 68:8CrossRef
28.
Filippi C, Singh DJ, Umrigar CJ (1994) All-electron local-density and generalized-gradient calculations of the structural properties of semiconductors. Phys Rev B 50:14947CrossRef
29.
Hÿtch MJ, Putaux JL, Pénisson JM (2003) Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy. Nature 423:27CrossRef
30.
31.
Choi KJ, Biegalski M, Li Y, Sharan A, Schubert J, Uecker R, Reiche P, Chen YB, Pan XQ, Gopalan V, Chen LQ, Schlom DG, Eom CB (2004) Enhancement of ferroelectricity in strained BaTiO3 thin films. Science 306:1005CrossRef
32.
Ohno T, Ishiduka M, Arai T, Yanagida H, Matsuda T, Sakamoto N, Wakiya N, Suzuki H (2012) Strain-induced electrical properties of lead zirconate titanate thin films on a Si wafer with controlled oxide electrode structure. Jpn J Appl Phys 51:09LA13CrossRef
33.
Cao J, Wu J (2011) Strain effects in low-dimensional transition metal oxides. Mat Sci Eng Rep 71:35–52CrossRef
34.
Le Rhun G, Vrejoiu I, Pintilie L, Hesse D, Alexe M, Gosele U (2006) Increased ferroelastic domain mobility in ferroelectric thin films and its use in nano-patterned capacitors. Nanotechnology 17:3154CrossRef
35.
Luo Y, Li X, Chang L, Gao W, Yuan G, Yin J, Liu Z (2013) Upward ferroelectric self-poling in (001) oriented PbZr0.2Ti0.8O3 epitaxial films with compressive strain. AIP Adv 3:122101CrossRef
36.
Dahl O, Grepstad JK, Tybell T (2009) Polarization direction and stability in ferroelectric lead titanate thin films. J Appl Phys 106:084104CrossRef
37.
Apostol NG, Stoflea LE, Lungu GA, Tache CA, Popescu DG, Pintilie L, Teodorescu CM (2013) Band bending at free Pb(Zr, Ti)O3 surfaces analyzed by X-ray photoelectron spectroscopy. Mat Sci Eng B 178:1317CrossRef
38.
Schroeder DK (1998) Semiconductor material and device characterization. Wiley, New York
39.
Hrib LM, Boni AG, Chirila C, Pasuk I, Pintilie I, Pintilie L (2013) Electrode interface control of the Schottky diode-like behavior in epitaxial Pb(Zr0.2Ti0.8)O3 thin films: a critical analysis. J Appl Phys 113:214108CrossRef
40.
Picinin A, Lente MH, Eiras JA, Rino JP (2004) Theoretical and experimental investigations of polarization switching in ferroelectric materials. Phys Rev B 69:064117CrossRef
41.
Lee HN, Nakhmanson SM, Chisholm MF, Christen HM, Rabe KM, Vanderbil D (2007) Suppressed dependence of polarization on epitaxial strain in highly polar ferroelectrics. Phys Rev Lett 98:217602CrossRef
42.
Han MG, Marshall MSH, Wu L, Schofield MA, Aoki T, Twesten R, Hoffman J, Walker FJ, Ahn CH, Zhu Y (2014) Interface-induced nonswitchable domains in ferroelectric thin films. Nat Commun 5:4693
43.
Alpay SP, Misirlioglu IB, Nagarajan V, Ramesh R (2004) Can interface dislocations degrade ferroelectric properties? Appl Phys Lett 85:2044CrossRef
44.
Wood C, Jena D (2008) Polarization effects in semiconductors: from ab initio theory to device applications. Springer, New YorkCrossRef
45.
Hartmann AJ, Neilson M, Lamb RN, Watanabe K, Scott JF (2000) Ruthenium oxide and strontium ruthenate electrodes for ferroelectric thin-films capacitors. Appl Phys A 70:239CrossRef
46.
Lide DR (1995) Handbook of chemistry and physics, 76th edn. CRC, Boca Raton
47.
Lo VC (2002) Modeling the role of oxygen vacancy on ferroelectric properties in thin films. Appl Phys Lett 92:6778
48.
Li KT, Lo VC (2005) Simulation of oxygen vacancy induced phenomena in ferroelectric thin films. J Appl Phys 97:034107CrossRef
49.
Jin L, Li F, Zhang S (2014) Decoding the fingerprint of ferroelectric loops: comprehension of the material properties and structures. J Am Ceram Soc 97(1):1CrossRef
50.
51.
Boersu I, Pintilie L, Pereira M, Vasilevskiy MI, Gomes MJM (2003) Competition between ferroelectric and semiconductor properties in Pb.Zr0.65Ti0.35.O3 thin films deposited by sol–gel. J Appl Phys 93:4776CrossRef
52.
Chai FK, Brews JR, Schrimpf RD, Birnie DP III (1995) Limitations of the uniform effective field approximation due to doping of ferroelectric thin-film capacitors. J Appl Phys 78:4766CrossRef
53.
Delimova LA, Grekhov IV, Mashovets DV, Tyaginov SE, Shin S, Koo JM, Kim S, Park Y (2005) Transient-current measurement of the trap charge density at interfaces of a thin-film metal/ferroelectric/metal structure. Appl Phys Lett 87:192101CrossRef
54.
Scott JF (2000) Ferroelectric memories. Springer, Berlin
55.
Simmons JG (1969) Effect of deep traps on the barrier heights of metal-insulator-metal tunnel junctions. Phys Rev Lett 23:297CrossRef
56.
Pintilie L, Vrejoiu I, Hesse D, LeRhun G, Alexe M (2007) Ferroelectric polarization-leakage current relation in high quality epitaxial Pb(Zr, Ti)O3 films. Phys Rev B 75:104103CrossRef
57.
Pintilie L, Alexe M (2005) Metal-ferroelectric-metal heterostructures with Schottky contacts. Influence of the ferroelectric properties. J Appl Phys 98:124103CrossRef
58.
Pintilie L, Dragoi C, Chu YH, Martin LW, Ramesh R, Alexe M (2009) Orientation-dependent potential barriers in case of epitaxial Pt–BiFeO3–SrRuO3 capacitors. Appl Phys Lett 94:232902CrossRef
59.
Moret MP, Devillers MAC, Wörhoff K, Larsen PK (2002) Optical properties of PbTiO3, PbZrxTi1−xO3, and PbZrO3 films deposited by metal organic chemical vapor on SrTiO3. J Appl Phys 92:468CrossRef
Metadaten
Titel
Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates
verfasst von
Cristina Chirila
Andra Georgia Boni
Iuliana Pasuk
Raluca Negrea
Lucian Trupina
Gwenael Le Rhun
Shi Yin
Bertrand Vilquin
Ioana Pintilie
Lucian Pintilie
Publikationsdatum
01.06.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 11/2015
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-015-8907-2

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