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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 7/2019

04.03.2019

Comparison of electrical characteristics of zinc oxide and cadmium sulfide films covered with 8-hydroxyquinoline for diode applications

verfasst von: Ramazan Demir, İsmet Kaya

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 7/2019

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Abstract

In the present work, n-ZnO/p-8HQ and n-CdS/p-8HQ thin film heterojunctions were fabricated using spin coating and chemical bath deposition (CBD) techniques, respectively. The letter “n” indicates that the film is an n-type semiconductor, and the letter “p” is a p-type semiconductor. The thin films of ZnO covered with 8-hydroxyquinoline (8HQ) and CdS covered with 8HQ were investigated for electrical characteristics. The crystal structure of the films was investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM) techniques. The optical properties of the films were investigated through a ultraviolet–visible spectrophotometer (UV–Vis spectrometer). The experimental results show that the conduction mechanism in the films is ohmic. The experimental results also reveal that ZnO thin films have diode properties with 8HQ while CdS does not have diode properties with 8HQ.
Vorheriger Artikel A highly efficient UV-emitting Mg3Y2Ge3O12:Bi3+ crystal as a fluorescent irradiation source for use in heavy oil viscosity reduction
Nächster Artikel Bismuth induced crystallization of hydrogenated amorphous silicon thin films: effect of annealing time

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Metadaten
Titel
Comparison of electrical characteristics of zinc oxide and cadmium sulfide films covered with 8-hydroxyquinoline for diode applications
verfasst von
Ramazan Demir
İsmet Kaya
Publikationsdatum
04.03.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 7/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01027-3

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