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Erschienen in:
2007 | OriginalPaper | Buchkapitel
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs
verfasst von : C. Fiegna, M. Braccioli, S. C. Brugger, F. M. Bufler, P. Dollfus, V. Aubry-Fortuna, C. Jungemann, B. Meinerzhagen, P. Palestri, S. Galdin-Retailleau, E. Sangiorgi, A. Schenk, L. Selmi
Erschienen in: Simulation of Semiconductor Processes and Devices 2007
Verlag: Springer Vienna
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This paper presents the results of a comparison among five Monte Carlo device simulators for nano-scale MOSFETs. These models are applied to the simulation of the I–V characteristics of a 25 nm gate-length MOSFET representative of the high-performance transistor of the 65 nm technology node. Appreciable differences between the simulators are obtained in terms of simulated I
ON
. These differences are mainly related to different treatments of the ionized impurity scattering (IIS) and pinpoint a limitation of the available models for screening effects at very large carrier concentrations.