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Erschienen in:
2014 | OriginalPaper | Buchkapitel
Comprehensive Analytical Modeling of N-polar GaN/AlGaN Insulated Gate HEMTs with and without Polarization Neutralization Layer
verfasst von : Saptarsi Ghosh, Syed Mukulika Dinara, Ankush Bag, Apurba. chakraborty, Partha Mukhopadhyay, Sanjib Kabi, Dhrubes Biswas
Erschienen in: Physics of Semiconductor Devices
Verlag: Springer International Publishing
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Electrical characteristics of N-polar GaN/Al
x
Ga
1-x
N insulated gate (MIS) HEMTs are theoretically analyzed. Threshold voltage models are developed for both the generalized and the polarization neutralized structures. Based on these developments, the drain current and transconductance are formulated after incorporation of an appropriate Monte-Carlo simulation based mobility model for GaN. Non-idealities such as imaging charges in the interface/buffer, source drain resistances, and velocity saturation are taken into account in the present model. The analytical results on the transport characteristics of the device are compared with experimentally measured data and are in close agreement.