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Erschienen in: Journal of Materials Science: Materials in Electronics 19/2020

25.08.2020

Construction of oxygen vacancy modified Bi/BiOI nanocomposite with improved photocatalytic activity for microcystin-LR degradation

verfasst von: Feiyu Xiao, Jinmei Xu, Ziwei Wang, Shanqing Jiang, Qiuya Zhang, LiPing Wang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 19/2020

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Abstract

Herein, a series of Bi/BiOI nanocomposites with oxygen vacancy modification have been prepared by the hydrogenated method. The Bi metal and oxygen vacancy were generated after annealing at high temperature concurrently. The obtained composite Bi/BiOI nanocomposite (label as x-BiOI, x means different annealing temperature) was used as a model photocatalyst to research the leading effects of oxygen vacancy and surface plasmon resonance (SPR) effect in microcystin-LR (MC-LR) photodegradation. As one of the most dangerous microcystins, the removal of MC-LR is urgent and meaningful. Moreover, based on the MC-LR photodegradation results, the photocatalytic activity of all oxygen vacancy modified Bi/BiOI nanocomposites was better than that of pristine BiOI. Meanwhile, the 500-BiOI photocatalysis shows the optimal photocatalysis performance. In detail, the degradation rate constant of 500-BiOI (0.56196 h−1) is around five times higher than that of pristine BiOI (0.1047 h−1). The microcystin toxin of intermediate was also analyzed systematically. The probable mechanism of the obtained sample was proposed for better understanding the MC-LR photodegradation process. This work provides a critical reference in water pollution treatment.

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Metadaten
Titel
Construction of oxygen vacancy modified Bi/BiOI nanocomposite with improved photocatalytic activity for microcystin-LR degradation
verfasst von
Feiyu Xiao
Jinmei Xu
Ziwei Wang
Shanqing Jiang
Qiuya Zhang
LiPing Wang
Publikationsdatum
25.08.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 19/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-04257-y

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