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12.03.2020 | RADIO MEASUREMENTS

Construction of Two-Dimensional Regression Models of the Current-voltage Characteristics of the Output Current of Field-Effect Transistors Using the PLExp Information System

Zeitschrift:
Measurement Techniques
Autoren:
N. Yu. Baturina, I. V. Kalienko
Wichtige Hinweise
Translated from Izmeritel’naya Tekhnika, No.11, pp. 49–55, November, 2019.
A problem was formulated and a methodology proposed for constructing the two-dimensional current-voltage characteristic of an output current of a field transistor in the form of its dependence on the input and output voltages. With the aid of the PLExp information system, the design of the computational test was fulfilled and the results of field studies were processed in studying the characteristics of the output current of field transistors with a controlling p–n transition. A two-dimensional regression analysis of the dispersion of the experimental data was conducted, the quality of the regression models that were constructed was evaluated, and the effect on the quality of the regression model from the number of input test points was studied. A regression model using the orthogonal central second-order composition plot was developed. The results of computational test on field studies are provided in the form of the table of coefficients of the polynomials for the two-dimensional regression models and in the form of graphs. In order to construct the current-voltage characteristics, polynomial two-dimensional regression models constructed on nine observational points were used. The ranges of factor variation within which the regression model is significant were established. The significance of the regression equation as a whole was evaluated using two criteria: the Fisher criterion and the criterion of the mean error of approximation. It was discovered that decreasing the number of test points by a factor of three does not result in significant quality degradation of the regression model. The proposed experimental method based on the regression model makes it possible to construct the two-dimensional characteristics also of other types of insulated-gate field effect transistors.

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