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Erschienen in: Journal of Materials Science: Materials in Electronics 16/2019

15.07.2019

Controllable growth of large-area monolayer ReS2 flakes by chemical vapor deposition

verfasst von: Zongliang Guo, Aixiang Wei, Yuding He, Chunhua He, Jun Liu, Zhen Liu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 16/2019

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Abstract

Two-dimensional (2D) ReS2 flakes are synthesized by the chemical vapor deposition under atmospheric pressure using Re–Te binary eutectic and sulfur as precursors. The morphologies, crystal structure, phonon vibration modes, chemical states and optical property of the 2D ReS2 flakes are characterized using optical microscopy, scanning electron microscope, transmission electron microscopy, the Raman spectroscopy, X-ray photoelectron spectroscopy and transmittance spectra. The lateral size of 2D ReS2 flakes can be tuned via changing the synthesis parameters. The monolayer 2D ReS2 flakes is single crystal structure. Its maximum lateral size is 30 μm, and optical band gap is 1.42 eV. The absorption coefficient is as large as 105 cm−1, transmittance of 92–98% and refractive index of 1.5–1.3 in the wavelength range from 400 to 800 nm. The effect of synthesis parameters on the morphologies and growth mechanism of 2D ReS2 flakes are investigated in detail. This is helpful for further application of ReS2 in electronic and optoelectronic devices.

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Literatur
1.
Zurück zum Zitat L. Yang, C. Xie, J. Jin, R.N. Ali, C. Feng, P. Liu, B. Xiang, Properties, preparation and applications of low dimensional transition metal dichalcogenides. Nanomaterials-Basel 8(7), 463 (2018)CrossRef L. Yang, C. Xie, J. Jin, R.N. Ali, C. Feng, P. Liu, B. Xiang, Properties, preparation and applications of low dimensional transition metal dichalcogenides. Nanomaterials-Basel 8(7), 463 (2018)CrossRef
2.
Zurück zum Zitat C.L. Tan, Z.C. Lai, H. Zhang, Ultrathin two-dimensional multinary layered metal chalcogenide nanomaterials. Adv. Mater. 29(37), 1701392 (2017)CrossRef C.L. Tan, Z.C. Lai, H. Zhang, Ultrathin two-dimensional multinary layered metal chalcogenide nanomaterials. Adv. Mater. 29(37), 1701392 (2017)CrossRef
3.
Zurück zum Zitat J.H. Kim, J.H. Jeong, N. Kim, R. Joshi, G. Lee, Mechanical properties of two-dimensional materials and their applications. J. Phys. D 52(8), 083001 (2019)CrossRef J.H. Kim, J.H. Jeong, N. Kim, R. Joshi, G. Lee, Mechanical properties of two-dimensional materials and their applications. J. Phys. D 52(8), 083001 (2019)CrossRef
4.
Zurück zum Zitat Z.P. Zhang, P.F. Yang, M. Hong, S.L. Jiang, G.C. Zhao, J.P. Shi, Q. Xie, Y.F. Zhang, Recent progress in the controlled synthesis of 2D metallic transition metal dichalcogenides. Nanotechnology 30(18), 182002 (2019)CrossRef Z.P. Zhang, P.F. Yang, M. Hong, S.L. Jiang, G.C. Zhao, J.P. Shi, Q. Xie, Y.F. Zhang, Recent progress in the controlled synthesis of 2D metallic transition metal dichalcogenides. Nanotechnology 30(18), 182002 (2019)CrossRef
5.
Zurück zum Zitat B. Jariwala, D. Voiry, A. Jindal, B.A. Chalke, R. Bapat, A. Thamizhavel, M. Chhowalla, M. Deshmukh, A. Bhattacharya, Synthesis and characterization of ReS2 and ReSe2 layered chalcogenide single crystals. Chem. Mater. 28(10), 3352–3359 (2016)CrossRef B. Jariwala, D. Voiry, A. Jindal, B.A. Chalke, R. Bapat, A. Thamizhavel, M. Chhowalla, M. Deshmukh, A. Bhattacharya, Synthesis and characterization of ReS2 and ReSe2 layered chalcogenide single crystals. Chem. Mater. 28(10), 3352–3359 (2016)CrossRef
6.
Zurück zum Zitat P. Miao, J. Qin, Y.F. Shen, H.M. Su, J.F. Dai, B. Song, Y.C. Du, M.T. Sun, W. Zhang, H. Wang, C. Xu, P. Xu, Unraveling the Raman enhancement mechanism on 1T’-phase ReS2 nanosheets. Small 14(14), 1704079 (2018)CrossRef P. Miao, J. Qin, Y.F. Shen, H.M. Su, J.F. Dai, B. Song, Y.C. Du, M.T. Sun, W. Zhang, H. Wang, C. Xu, P. Xu, Unraveling the Raman enhancement mechanism on 1T’-phase ReS2 nanosheets. Small 14(14), 1704079 (2018)CrossRef
7.
Zurück zum Zitat J. Seo, J. Lee, G. Jeong, H. Park, Site-selective and van der Waals epitaxial growth of rhenium disulfide on graphene. Small 15(2), 1804133 (2019) J. Seo, J. Lee, G. Jeong, H. Park, Site-selective and van der Waals epitaxial growth of rhenium disulfide on graphene. Small 15(2), 1804133 (2019)
8.
Zurück zum Zitat M. Rahman, K. Davey, S. Qiao, Advent of 2D rhenium disulfide (ReS2): fundamentals to applications. Adv. Funct. Mater. 27(10), 1606129 (2017)CrossRef M. Rahman, K. Davey, S. Qiao, Advent of 2D rhenium disulfide (ReS2): fundamentals to applications. Adv. Funct. Mater. 27(10), 1606129 (2017)CrossRef
9.
Zurück zum Zitat K.D. Wu, B. Chen, S.J. Yang, G. Wang, W. Kong, H. Cai, T. Aoki, E. Soignard, X. Marie, A. Yano, A. Suslu, B. Urbaszek, S. Tongay, Domain architectures and grain boundaries in chemical vapor deposited highly anisotropic ReS2 monolayer films. Nano Lett. 16(9), 5888–5894 (2016)CrossRef K.D. Wu, B. Chen, S.J. Yang, G. Wang, W. Kong, H. Cai, T. Aoki, E. Soignard, X. Marie, A. Yano, A. Suslu, B. Urbaszek, S. Tongay, Domain architectures and grain boundaries in chemical vapor deposited highly anisotropic ReS2 monolayer films. Nano Lett. 16(9), 5888–5894 (2016)CrossRef
10.
Zurück zum Zitat S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. Huang, C. Ho, J. Yan, D.F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F.M. Peeters, J. Wu, Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling. Nat. Commun. 5, 3252 (2014)CrossRef S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. Huang, C. Ho, J. Yan, D.F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F.M. Peeters, J. Wu, Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling. Nat. Commun. 5, 3252 (2014)CrossRef
11.
Zurück zum Zitat W.F. Shen, C.G. Hu, J. Tao, J. Liu, S.Q. Fan, Y.X. Wei, C.H. An, J.C. Chen, S. Wu, Y.N. Li, J. Liu, D.H. Zhang, L.D. Sun, X.T. Hu, Resolving the optical anisotropy of low-symmetry 2D materials. Nanoscale 10(17), 8329–8337 (2018)CrossRef W.F. Shen, C.G. Hu, J. Tao, J. Liu, S.Q. Fan, Y.X. Wei, C.H. An, J.C. Chen, S. Wu, Y.N. Li, J. Liu, D.H. Zhang, L.D. Sun, X.T. Hu, Resolving the optical anisotropy of low-symmetry 2D materials. Nanoscale 10(17), 8329–8337 (2018)CrossRef
12.
Zurück zum Zitat Q. Zhang, W. Wang, J. Zhang, X. Zhu, L. Fu, Thermally induced bending of ReS2 nanowalls. Adv. Mater. 30(3), 1704585 (2018)CrossRef Q. Zhang, W. Wang, J. Zhang, X. Zhu, L. Fu, Thermally induced bending of ReS2 nanowalls. Adv. Mater. 30(3), 1704585 (2018)CrossRef
13.
Zurück zum Zitat F.F. Cui, C. Wang, X.B. Li, G. Wang, K.Q. Liu, Z. Yang, Q.L. Feng, X. Liang, Z.Y. Zhang, S.Z. Liu, Z.B. Lei, Z.H. Liu, H. Xu, J. Zhang, Tellurium-assisted epitaxial growth of large-area, highly crystalline ReS2 atomic layers on mica substrate. Adv. Mater. 28(25), 5019–5024 (2016)CrossRef F.F. Cui, C. Wang, X.B. Li, G. Wang, K.Q. Liu, Z. Yang, Q.L. Feng, X. Liang, Z.Y. Zhang, S.Z. Liu, Z.B. Lei, Z.H. Liu, H. Xu, J. Zhang, Tellurium-assisted epitaxial growth of large-area, highly crystalline ReS2 atomic layers on mica substrate. Adv. Mater. 28(25), 5019–5024 (2016)CrossRef
14.
Zurück zum Zitat E. Zhang, Y. Jin, X. Yuan, W.Y. Wang, C. Zhang, L. Tang, S.S. Liu, P. Zhou, W.D. Hu, F.X. Xiu, ReS2-based field-effect transistors and photodetectors. Adv. Funct. Mater. 25(26), 4076–4082 (2015)CrossRef E. Zhang, Y. Jin, X. Yuan, W.Y. Wang, C. Zhang, L. Tang, S.S. Liu, P. Zhou, W.D. Hu, F.X. Xiu, ReS2-based field-effect transistors and photodetectors. Adv. Funct. Mater. 25(26), 4076–4082 (2015)CrossRef
15.
Zurück zum Zitat C.M. Corbett, C. Mcclellan, A. Rai, S.S. Sonde, E. Tutuc, S.K. Banerjee, Field effect transistors with current saturation and voltage gain in ultrathin ReS2. ACS Nano 9(1), 363–370 (2015)CrossRef C.M. Corbett, C. Mcclellan, A. Rai, S.S. Sonde, E. Tutuc, S.K. Banerjee, Field effect transistors with current saturation and voltage gain in ultrathin ReS2. ACS Nano 9(1), 363–370 (2015)CrossRef
16.
Zurück zum Zitat E. Liu, M.S. Long, J.W. Zeng, W. Luo, Y.J. Wang, Y.M. Pan, W. Zhou, B.G. Wang, W.D. Hu, Z.H. Ni, Y.M. You, X.A. Zhang, S.Q. Qin, Y. Shi, K. Watanabe, T. Taniguchi, H.T. Yuan, H.Y. Hwang, Y. Cui, F. Miao, D.Y. Xing, High responsivity phototransistors based on few-layer ReS2 for weak signal detection. Adv. Funct. Mater. 26(12), 1938–1944 (2016)CrossRef E. Liu, M.S. Long, J.W. Zeng, W. Luo, Y.J. Wang, Y.M. Pan, W. Zhou, B.G. Wang, W.D. Hu, Z.H. Ni, Y.M. You, X.A. Zhang, S.Q. Qin, Y. Shi, K. Watanabe, T. Taniguchi, H.T. Yuan, H.Y. Hwang, Y. Cui, F. Miao, D.Y. Xing, High responsivity phototransistors based on few-layer ReS2 for weak signal detection. Adv. Funct. Mater. 26(12), 1938–1944 (2016)CrossRef
17.
Zurück zum Zitat M. Hafeez, L. Gan, H.Q. Li, Y. Ma, T.Y. Zhai, Large-area bilayer ReS2 film/multilayer ReS2 flakes synthesized by chemical vapor deposition for high performance photodetectors. Adv. Funct. Mater. 26(25), 4551–4560 (2016)CrossRef M. Hafeez, L. Gan, H.Q. Li, Y. Ma, T.Y. Zhai, Large-area bilayer ReS2 film/multilayer ReS2 flakes synthesized by chemical vapor deposition for high performance photodetectors. Adv. Funct. Mater. 26(25), 4551–4560 (2016)CrossRef
18.
Zurück zum Zitat X.B. Li, F.F. Cui, Q.L. Feng, G. Wang, X.S. Xu, J.X. Wu, N.N. Mao, X. Liang, Z.Y. Zhang, J. Zhang, H. Xu, Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application. Nanoscale 8(45), 18956–18962 (2016)CrossRef X.B. Li, F.F. Cui, Q.L. Feng, G. Wang, X.S. Xu, J.X. Wu, N.N. Mao, X. Liang, Z.Y. Zhang, J. Zhang, H. Xu, Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application. Nanoscale 8(45), 18956–18962 (2016)CrossRef
19.
Zurück zum Zitat J. Qin, G. Qiu, W. He, J. Jian, M. Si, Y. Duan, A. Charnas, D.Y. Zemlyanov, H. Wang, W. Shao, L. Zhen, C. Xu, P.D. Ye, Epitaxial growth of 1D atomic chain based se nanoplates on monolayer ReS2 for high-performance photodetectors. Adv. Funct. Mater. 28(48), 1806254 (2018)CrossRef J. Qin, G. Qiu, W. He, J. Jian, M. Si, Y. Duan, A. Charnas, D.Y. Zemlyanov, H. Wang, W. Shao, L. Zhen, C. Xu, P.D. Ye, Epitaxial growth of 1D atomic chain based se nanoplates on monolayer ReS2 for high-performance photodetectors. Adv. Funct. Mater. 28(48), 1806254 (2018)CrossRef
20.
Zurück zum Zitat E. Liu, Y.J. Fu, Y.J. Wang, Y.Q. Feng, H.M. Liu, X.G. Wan, W. Zhou, B.G. Wang, L.B. Shao, C. Ho, Y. Huang, Z.Y. Cao, L.G. Wang, A.D. Li, J.W. Zeng, F.Q. Song, X.R. Wang, Y. Shi, H.T. Yuan, H.Y. Hwang, Y. Cui, F. Miao, D.Y. Xing, Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors. Nat. Commun. 6, 6991 (2015)CrossRef E. Liu, Y.J. Fu, Y.J. Wang, Y.Q. Feng, H.M. Liu, X.G. Wan, W. Zhou, B.G. Wang, L.B. Shao, C. Ho, Y. Huang, Z.Y. Cao, L.G. Wang, A.D. Li, J.W. Zeng, F.Q. Song, X.R. Wang, Y. Shi, H.T. Yuan, H.Y. Hwang, Y. Cui, F. Miao, D.Y. Xing, Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors. Nat. Commun. 6, 6991 (2015)CrossRef
21.
Zurück zum Zitat Z.H. Zhou, B.C. Wei, C.Y. He, Y.M. Min, C.H. Chen, L.Z. Liu, X.L. Wu, Anisotropic Raman scattering and mobility in monolayer 1T(d)-ReS2 controlled by strain engineering. Appl. Surf. Sci. 404, 276–281 (2017)CrossRef Z.H. Zhou, B.C. Wei, C.Y. He, Y.M. Min, C.H. Chen, L.Z. Liu, X.L. Wu, Anisotropic Raman scattering and mobility in monolayer 1T(d)-ReS2 controlled by strain engineering. Appl. Surf. Sci. 404, 276–281 (2017)CrossRef
22.
Zurück zum Zitat A. Cho, S.D. Namgung, H. Kim, J. Kwon, Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure. APL Mater. 5(7), 076101 (2017)CrossRef A. Cho, S.D. Namgung, H. Kim, J. Kwon, Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure. APL Mater. 5(7), 076101 (2017)CrossRef
23.
Zurück zum Zitat J. Hamalainen, M. Mattinen, K. Mizohata, K. Meinander, M. Vehkamaki, J. Raisanen, M. Ritala, M. Leskela, Atomic layer deposition of rhenium disulfide. Adv. Mater. 30(24), 1703622 (2018)CrossRef J. Hamalainen, M. Mattinen, K. Mizohata, K. Meinander, M. Vehkamaki, J. Raisanen, M. Ritala, M. Leskela, Atomic layer deposition of rhenium disulfide. Adv. Mater. 30(24), 1703622 (2018)CrossRef
24.
Zurück zum Zitat S.H. Zhang, J.Y. Wang, P. Chen, Y. Lu, W.W. Hou, Z.D. Wang, L. Wang, Facile synthesis of rhenium disulfide flakes by vacuum vapor transport method. Mater. Res. Bull. 111, 191–194 (2019)CrossRef S.H. Zhang, J.Y. Wang, P. Chen, Y. Lu, W.W. Hou, Z.D. Wang, L. Wang, Facile synthesis of rhenium disulfide flakes by vacuum vapor transport method. Mater. Res. Bull. 111, 191–194 (2019)CrossRef
25.
Zurück zum Zitat Z.L. Guo, A.X. Wei, Y. Zhao, L.L. Tao, Y.B. Yang, Z.Q. Zheng, D.X. Luo, J. Liu, J.B. Li, Controllable growth of large-area atomically thin ReS2 films and their thickness-dependent optoelectronic properties. Appl. Phys. Lett. 114(15), 153102 (2019)CrossRef Z.L. Guo, A.X. Wei, Y. Zhao, L.L. Tao, Y.B. Yang, Z.Q. Zheng, D.X. Luo, J. Liu, J.B. Li, Controllable growth of large-area atomically thin ReS2 films and their thickness-dependent optoelectronic properties. Appl. Phys. Lett. 114(15), 153102 (2019)CrossRef
26.
Zurück zum Zitat X.X. He, F.C. Liu, P. Hu, W. Fu, X.L. Wang, Q.S. Zeng, W. Zhao, Z. Liu, Chemical vapor deposition of high-quality and atomically layered ReS2. Small 11(40), 5423–5429 (2015)CrossRef X.X. He, F.C. Liu, P. Hu, W. Fu, X.L. Wang, Q.S. Zeng, W. Zhao, Z. Liu, Chemical vapor deposition of high-quality and atomically layered ReS2. Small 11(40), 5423–5429 (2015)CrossRef
27.
Zurück zum Zitat Y. Lin, H. Komsa, C. Yeh, T. Bjorkman, Z. Liang, C. Ho, Y. Huang, P. Chiu, A.V. Krasheninnikov, K. Suenaga, Single-layer ReS2: two-dimensional semiconductor with tunable in-plane anisotropy. ACS Nano 9(11), 11249–11257 (2015)CrossRef Y. Lin, H. Komsa, C. Yeh, T. Bjorkman, Z. Liang, C. Ho, Y. Huang, P. Chiu, A.V. Krasheninnikov, K. Suenaga, Single-layer ReS2: two-dimensional semiconductor with tunable in-plane anisotropy. ACS Nano 9(11), 11249–11257 (2015)CrossRef
28.
Zurück zum Zitat T. Fujita, Y. Ito, Y. Tan, H. Yamaguchi, D. Hojo, A. Hirata, D. Voiry, M. Chhowalla, M. Chen, Chemically exfoliated ReS2 nanosheets. Nanoscale 6(21), 12458–12462 (2014)CrossRef T. Fujita, Y. Ito, Y. Tan, H. Yamaguchi, D. Hojo, A. Hirata, D. Voiry, M. Chhowalla, M. Chen, Chemically exfoliated ReS2 nanosheets. Nanoscale 6(21), 12458–12462 (2014)CrossRef
29.
Zurück zum Zitat F. Qi, J. He, Y. Chen, B. Zheng, Q. Li, X. Wang, B. Yu, J. Lin, J. Zhou, P. Li, W. Zhang, Y. Li, Few-layered ReS2 nanosheets grown on carbon nanotubes: a highly efficient anode for high-performance lithium-ion batteries. Chem. Eng. J. 315, 10–17 (2017)CrossRef F. Qi, J. He, Y. Chen, B. Zheng, Q. Li, X. Wang, B. Yu, J. Lin, J. Zhou, P. Li, W. Zhang, Y. Li, Few-layered ReS2 nanosheets grown on carbon nanotubes: a highly efficient anode for high-performance lithium-ion batteries. Chem. Eng. J. 315, 10–17 (2017)CrossRef
30.
Zurück zum Zitat A.S. Hassanien, A.A. Akl, Optical characteristics of iron oxide thin films prepared by spray pyrolysis technique at different substrate temperatures. Appl. Phys. A 124(11), 752 (2018)CrossRef A.S. Hassanien, A.A. Akl, Optical characteristics of iron oxide thin films prepared by spray pyrolysis technique at different substrate temperatures. Appl. Phys. A 124(11), 752 (2018)CrossRef
31.
Zurück zum Zitat A.S. Hassanien, I. Sharma, Band-gap engineering, conduction and valence band positions of thermally evaporated amorphous Ge15−xSbxSe50Te35 thin films: influences of Sb upon some optical characterizations and physical parameters. J. Alloy. Compd. 798(25), 750–763 (2019)CrossRef A.S. Hassanien, I. Sharma, Band-gap engineering, conduction and valence band positions of thermally evaporated amorphous Ge15−xSbxSe50Te35 thin films: influences of Sb upon some optical characterizations and physical parameters. J. Alloy. Compd. 798(25), 750–763 (2019)CrossRef
32.
Zurück zum Zitat L. Chen, B.L. Liu, A.N. Abbas, Y.Q. Ma, X. Fang, Y.H. Liu, C.W. Zhou, Screw-dislocation-driven growth of two-dimensional few-layer and pyramid-like WSe2 by sulfur-assisted chemical vapor deposition. ACS Nano 8(11), 11543–11551 (2014)CrossRef L. Chen, B.L. Liu, A.N. Abbas, Y.Q. Ma, X. Fang, Y.H. Liu, C.W. Zhou, Screw-dislocation-driven growth of two-dimensional few-layer and pyramid-like WSe2 by sulfur-assisted chemical vapor deposition. ACS Nano 8(11), 11543–11551 (2014)CrossRef
33.
Zurück zum Zitat L.M. Zhang, K.H. Liu, A.B. Wong, J. Kim, X.P. Hong, C. Liu, T. Cao, S.G. Louie, F. Wang, P.D. Yang, Three-dimensional spirals of atomic layered MoS2. Nano Lett. 14(11), 6418–6423 (2014)CrossRef L.M. Zhang, K.H. Liu, A.B. Wong, J. Kim, X.P. Hong, C. Liu, T. Cao, S.G. Louie, F. Wang, P.D. Yang, Three-dimensional spirals of atomic layered MoS2. Nano Lett. 14(11), 6418–6423 (2014)CrossRef
Metadaten
Titel
Controllable growth of large-area monolayer ReS2 flakes by chemical vapor deposition
verfasst von
Zongliang Guo
Aixiang Wei
Yuding He
Chunhua He
Jun Liu
Zhen Liu
Publikationsdatum
15.07.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 16/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01877-x

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