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Erschienen in: Journal of Materials Science: Materials in Electronics 15/2020

23.06.2020

Controllable synthesis of Ni-dotted Fe3S4 with its superior wideband electromagnetic absorbing performance

verfasst von: Wenli Bao, Cong Chen, Wen Chen, Xiaohai Ding, Zhenjun Si

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 15/2020

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Abstract

Transition metal dichalcogenides (TMD) have attracted considerable attention as promising electromagnetic (EM) absorbing materials due to the desirable conductivity loss ability. However, the single conductivity loss ability is still difficult to obtain high EM absorption performance. In this work, a Ni-dotted magnetic Fe3S4 nanoparticle has been produced via a simple solvothermal and subsequent ball-milling route. The results revealed that the Ni-dotted Fe3S4 is not only having conductivity loss, but also shows magnetic and polarization loss capability. Because of multiple loss mechanism, the Ni-dotted Fe3S4 shows wideband EM absorbing ability, with an effective absorption region of 6.4 GHz at a thinner thickness of 1.6 mm. Utilization of doping strategy to modify TMD material can be a candidate for producing high-performance EM absorbers.

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Metadaten
Titel
Controllable synthesis of Ni-dotted Fe3S4 with its superior wideband electromagnetic absorbing performance
verfasst von
Wenli Bao
Cong Chen
Wen Chen
Xiaohai Ding
Zhenjun Si
Publikationsdatum
23.06.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 15/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-03829-2

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