Cu content dependence of Cu2Zn(SnGe)Se4 solar cells prepared by using sequential thermal evaporation technique of Cu/Sn/Cu/Zn/Ge stacked layers

The doping of Cu₂ZnSnSe₄ semiconductor with Ge element has demonstrated improvements to kesterite solar cell efficiency. However, the impact of different Cu concentrations on Cu₂ZnSnGeSe₄/CdS solar cell performance has been poorly studied. In this work, Cu₂ZnSnGeSe₄ thin films with different Cu contents were synthesized by selenization of sequential thermal evaporation precursors. Solar cells based on kesterite-type Cu₂ZnSnGeSe₄ (CZTGSe) were fabricated and the influence of the Cu thickness on the chemical composition and morphology of the layers and electro-optical properties of solar cells was studied. The stacking process was performed at room substrate temperature. Efficiency values in the range of 2.0–6.8% are reported as a function of Cu concentration. The highest efficiency of 6.8%, was achieved for solar cell with glass/Mo/CZTGSe/CdS/i-ZnO/ITO structure using the stacking of Cu (3 nm)/Sn (248 nm)/Cu (112 nm)/Zn (174 nm)/Ge (20 nm).