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Journal of Materials Science
Erschienen in: Journal of Materials Science 4/2014

01.02.2014

Current conduction mechanisms in HfO2 and SrHfON thin films prepared by magnetron sputtering

verfasst von: Li-ping Feng, Ning Li, Hao Tian, Zheng-tang Liu

Erschienen in: Journal of Materials Science | Ausgabe 4/2014

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Abstract

Metal–oxide–semiconductor (MOS) capacitors incorporating HfO2 and SrHfON gate dielectrics were fabricated by magnetron sputtering. The interface quality, thermal stability, and electrical properties of the MOS capacitors have been investigated. Compared to HfO2 dielectric film, SrHfON dielectric film has thin interface layer with Si substrate, good thermal stability, and low leakage current densities. The dominant current conduction mechanisms (CCMs) of HfO2 film are Schottky emission or Poole–Frenkel emission at low and high electric fields. The main CCMs of SrHfON film are Schottky emission or Poole–Frenkel emission at low electric field, whereas, the CCMs are replaced by space charge limited current at high electric field.
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Metadaten
Titel
Current conduction mechanisms in HfO2 and SrHfON thin films prepared by magnetron sputtering
verfasst von
Li-ping Feng
Ning Li
Hao Tian
Zheng-tang Liu
Publikationsdatum
01.02.2014
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 4/2014
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-013-7876-6

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