2015 | OriginalPaper | Buchkapitel
Current Reduction Phenomenon in Graphene-Based Device
verfasst von : Honghui Sun, Liang Fang
Erschienen in: Computer Engineering and Technology
Verlag: Springer Berlin Heidelberg
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A current reduction phenomenon was observed in back gate graphene-based field effect transistor. The drain current I
D
became smaller in next measurement even though the sweep range of the back gate bias V
BG
increased. We consider the reason for this phenomenon is that the contaminations produced during the device fabrication inevitably may serve as trap centers at the electrode-graphene interface, which would weaken the extent of p-type doping by trapping electrons when V
BG
is positive.