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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 1/2017

20.08.2016

Deep dry etching of fused silica using C4F8/Ar inductively coupled plasmas

verfasst von: Laicun Lin, Xiangmeng Jing, Fengman Liu, Wen Yin, Daquan Yu, Liqiang Cao

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2017

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Abstract

This paper reports the etching process of fused silica by inductively coupled plasmas (ICP) for through glass via (TGV) applications. Mixed C4F8 and Ar were used as etching gases in present experiments. The effects of key factors, including etching gases, chamber pressure and substrate temperatures, on etch rate and via profile were studied. Results showed that a high etch rate of about 0.75 μm/min with smooth and vertical sidewall of TGVs can be obtained. Compared to Ar flux and chamber pressure, the effect of C4F8 flux on etch rate is more remarkable. Vertical vias (>89°) can be achieved by increasing the substrate temperature and decreasing the mixing ratio of C4F8 and Ar. Besides, micro-pillars at the bottom of via were observed when the substrate temperature was set at 0 °C. As the substrate temperature reached to 80 °C, micro-pillars were removed clearly. Optimized results indicate that the ICP etching is an effective method for fabricating TGV.
Vorheriger Artikel Optical and photocatalytic properties of Er3+ and/or Yb3+ doped TiO2 photocatalysts
Nächster Artikel Effects of Mn doping on dielectric and ferroelectric characteristics of lead-free (K, Na, Li)NbO3 thin films grown by chemical solution deposition

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Metadaten
Titel
Deep dry etching of fused silica using C4F8/Ar inductively coupled plasmas
verfasst von
Laicun Lin
Xiangmeng Jing
Fengman Liu
Wen Yin
Daquan Yu
Liqiang Cao
Publikationsdatum
20.08.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 1/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5546-6

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