Skip to main content
Erschienen in: Journal of Materials Science: Materials in Electronics 1/2018

20.10.2017

Dependence of {111}-textured Pt electrode properties on TiO2 seed layers formed by thermal oxidation

verfasst von: Glen R. Fox, Daniel M. Potrepka, Ronald G. Polcawich

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2018

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

The Pt/TiO2/SiO2/Si electrode structure prepared using sputter deposition of Ti, conversion of Ti to TiO2 by thermal oxidation, and sputter deposition of Pt was evaluated by using measurements of sheet resistance and X-ray diffraction. Nonlinearity of the reciprocal sheet resistance dependence on thickness revealed a change in the Ti conductivity that was attributed to a change in the Ti microstructure. Upon conversion to TiO2, it was determined that TiO2 exhibits a critical thickness of 32 nm that minimizes normal strain and {100}-textured misorientation and correlates with the onset of the Ti reciprocal sheet resistance nonlinearity. Both the TiO2 {100}-strain and {100}-texture directly affects the {111}-textured growth of Pt deposited at 500 °C. Pt deposited onto TiO2 films with the critical thickness of 32 nm exhibits a maximization of the normal strain relative to bulk Pt and also displays the narrowest distribution of Pt {111}-textured grain misalignment. The results presented show how Ti deposition conditions, TiO2 anneal conditions, and TiO2 thickness combine to modify the Pt electrode structural properties. Additionally, the measurement techniques demonstrated for the Ti, TiO2, and Pt are applicable to process control monitoring as well as standardized comparison of electrode structures used in integrated piezoelectric and ferroelectric devices.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literatur
1.
Zurück zum Zitat C. Feldman, Thin films of BaTiO3,. Phys. Rev. 96(3), 819 (1954) C. Feldman, Thin films of BaTiO3,. Phys. Rev. 96(3), 819 (1954)
2.
Zurück zum Zitat C. Feldman, Formation of thin films of BaTiO3 by evaporation. Rev. Sci. Instrum. 26(5), 463–466 (1955)CrossRef C. Feldman, Formation of thin films of BaTiO3 by evaporation. Rev. Sci. Instrum. 26(5), 463–466 (1955)CrossRef
3.
Zurück zum Zitat A.E. Feuersanger, Preparation and properties of high-permittivity thin film dielectrics, in Thin Film Dielectrics. Dielectrics and Insulation Division, ed. by F. Vratny (The Electrochemical Society, Inc., New York, 1969), pp. 209–235 A.E. Feuersanger, Preparation and properties of high-permittivity thin film dielectrics, in Thin Film Dielectrics. Dielectrics and Insulation Division, ed. by F. Vratny (The Electrochemical Society, Inc., New York, 1969), pp. 209–235
4.
Zurück zum Zitat H. Schwarz, H.A. Tourtelotte, Vacuum deposition by high energy laser with emphasis on barium titanate films. J. Vac. Sci. Technol. 6(3), 373–378 (1969)CrossRef H. Schwarz, H.A. Tourtelotte, Vacuum deposition by high energy laser with emphasis on barium titanate films. J. Vac. Sci. Technol. 6(3), 373–378 (1969)CrossRef
5.
Zurück zum Zitat W.J. Takei, N.P. Formigoni, M.H. Francombe, Preparation and properties of epitaxial films of ferroelectric Bi4Ti3O12. Appl. Phys. Lett. 15(8), 256–258 (1969)CrossRef W.J. Takei, N.P. Formigoni, M.H. Francombe, Preparation and properties of epitaxial films of ferroelectric Bi4Ti3O12. Appl. Phys. Lett. 15(8), 256–258 (1969)CrossRef
6.
Zurück zum Zitat I.H. Pratt, S. Firestone, Fabrication of rf-sputtered barium titanate thin films. J. Vac. Sci. Technol. 8(1), 256–260 (1971)CrossRef I.H. Pratt, S. Firestone, Fabrication of rf-sputtered barium titanate thin films. J. Vac. Sci. Technol. 8(1), 256–260 (1971)CrossRef
7.
Zurück zum Zitat D.W. Chapman, Ferroelectric/photoconductor memory element, U.S. Patent 3,681,765 (1972) D.W. Chapman, Ferroelectric/photoconductor memory element, U.S. Patent 3,681,765 (1972)
8.
Zurück zum Zitat S.F. Vogel, I.C. Barlow, Ferroelectric thin films by reactive sputtering and high-temperature conversion. J. Vac. Sci. Technol. 10(2), 381–385 (1973)CrossRef S.F. Vogel, I.C. Barlow, Ferroelectric thin films by reactive sputtering and high-temperature conversion. J. Vac. Sci. Technol. 10(2), 381–385 (1973)CrossRef
9.
Zurück zum Zitat H.J. Zajosz, Pyorelectric response to step radiation signals in thin ferroelectric films on a substrate. Thin Solid Films 62, 229–236 (1979)CrossRef H.J. Zajosz, Pyorelectric response to step radiation signals in thin ferroelectric films on a substrate. Thin Solid Films 62, 229–236 (1979)CrossRef
10.
Zurück zum Zitat E. Yamaka, H. Watanabe, H. Kimura, H. Kanaya, H. Ohkuma, Structural, ferroelectric, and pyroelectric properties of highly c-axis oriented Pb1 – xCaxTiO3 thin film grown by radio-frequency magnetron sputtering. J. Vac. Sci. Technol. A 6(5), 2921–2928 (1988)CrossRef E. Yamaka, H. Watanabe, H. Kimura, H. Kanaya, H. Ohkuma, Structural, ferroelectric, and pyroelectric properties of highly c-axis oriented Pb1 – xCaxTiO3 thin film grown by radio-frequency magnetron sputtering. J. Vac. Sci. Technol. A 6(5), 2921–2928 (1988)CrossRef
11.
Zurück zum Zitat M.H. Francombe, The research status and device potential of ferroelectric thin films. Ferroelectrics 3, 199–211 (1972)CrossRef M.H. Francombe, The research status and device potential of ferroelectric thin films. Ferroelectrics 3, 199–211 (1972)CrossRef
12.
Zurück zum Zitat M.H. Francombe, Ferroelectric films and their device applications. Thin Solid Films 13, 413–433 (1972)CrossRef M.H. Francombe, Ferroelectric films and their device applications. Thin Solid Films 13, 413–433 (1972)CrossRef
13.
Zurück zum Zitat T. Nakagawa, J. Yamaguchi, M. Okuyama, Y. Hamakawa, Preparation of PbTiO3 ferroelectric thin film by chemical vapor deposition. Jpn. J. Appl. Phys. 21(10), L655-L656 (1982) T. Nakagawa, J. Yamaguchi, M. Okuyama, Y. Hamakawa, Preparation of PbTiO3 ferroelectric thin film by chemical vapor deposition. Jpn. J. Appl. Phys. 21(10), L655-L656 (1982)
14.
Zurück zum Zitat B.S. Sharma, S.F. Vogel, P.I. Prentky, Retention in thin ferroelectric films. Ferroelectrics 5, 69–75 (1973)CrossRef B.S. Sharma, S.F. Vogel, P.I. Prentky, Retention in thin ferroelectric films. Ferroelectrics 5, 69–75 (1973)CrossRef
15.
Zurück zum Zitat S.Y. Wu, A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor. IEEE Trans. Electron. Dev. ED-21(8), 499–504 (1974) S.Y. Wu, A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor. IEEE Trans. Electron. Dev. ED-21(8), 499–504 (1974)
16.
Zurück zum Zitat J.F. Scott, C.A. Paz de Araujo, Ferroelectric memories. Science 246(4936), 1400–1405 (1989)CrossRef J.F. Scott, C.A. Paz de Araujo, Ferroelectric memories. Science 246(4936), 1400–1405 (1989)CrossRef
17.
Zurück zum Zitat V.S. Dharmadhikari, W.W. Grannermann, AES study on the chemical composition of ferroelectric BaTiO3 thin films rf sputter-deposited on silicon. J. Vac. Sci. Technol. A 1(2), 483–485 (1983)CrossRef V.S. Dharmadhikari, W.W. Grannermann, AES study on the chemical composition of ferroelectric BaTiO3 thin films rf sputter-deposited on silicon. J. Vac. Sci. Technol. A 1(2), 483–485 (1983)CrossRef
18.
Zurück zum Zitat L.D. Madsen, L. Weaver, Examination of barrier layers for lead zirconate titanate thin films. J. Electron. Mater. 21(1), 93–97 (1992)CrossRef L.D. Madsen, L. Weaver, Examination of barrier layers for lead zirconate titanate thin films. J. Electron. Mater. 21(1), 93–97 (1992)CrossRef
19.
Zurück zum Zitat B. Tsui, M. Chen, Low temperature reaction of thin film Pt (≤ 300 Å) with (100) silicon. J. Appl. Phys. 68(12), 6246–6252 (1990)CrossRef B. Tsui, M. Chen, Low temperature reaction of thin film Pt (≤ 300 Å) with (100) silicon. J. Appl. Phys. 68(12), 6246–6252 (1990)CrossRef
20.
Zurück zum Zitat O. Abbes, K. Hoummada, D. Mangelinck, V. Carron, Formation of Pt silicide on doped Si: kinetics and stress. Thin Solid Films 542, 174–179 (2013)CrossRef O. Abbes, K. Hoummada, D. Mangelinck, V. Carron, Formation of Pt silicide on doped Si: kinetics and stress. Thin Solid Films 542, 174–179 (2013)CrossRef
21.
Zurück zum Zitat E. Conforto, P.E. Schmidt, Pt-Si reaction through interfacial native silicon oxide layers. Philos. Mag. A 81(1), 61–82 (2001)CrossRef E. Conforto, P.E. Schmidt, Pt-Si reaction through interfacial native silicon oxide layers. Philos. Mag. A 81(1), 61–82 (2001)CrossRef
22.
Zurück zum Zitat Y.F. Zhu, Y.P. Yan, T. Yi, L.L. Cao, L.T. Li, Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si (111) sample. Chin. J. Chem. 18(3), 328–334 (2000) Y.F. Zhu, Y.P. Yan, T. Yi, L.L. Cao, L.T. Li, Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si (111) sample. Chin. J. Chem. 18(3), 328–334 (2000)
23.
Zurück zum Zitat S. Wei, B. Li, T. Fujimoto, I. Kojima, Surface morphological modification of Pt thin films induced by growth temperature. Phys. Rev. B 58(7), 3605–3608 (1998)CrossRef S. Wei, B. Li, T. Fujimoto, I. Kojima, Surface morphological modification of Pt thin films induced by growth temperature. Phys. Rev. B 58(7), 3605–3608 (1998)CrossRef
24.
Zurück zum Zitat K. Abe, H. Tomita, H. Toyoda, M. Imai, Y. Yokote, PZT thin film preparation on Pt-Ti electrode by rf sputtering. Jpn. J. Appl. Phys. 30(9B), 2152–2154 (1991)CrossRef K. Abe, H. Tomita, H. Toyoda, M. Imai, Y. Yokote, PZT thin film preparation on Pt-Ti electrode by rf sputtering. Jpn. J. Appl. Phys. 30(9B), 2152–2154 (1991)CrossRef
25.
Zurück zum Zitat J.C. Barbour, AEMJ Fischer, J.F. van der Veen, The thin-film reaction between Ti and thermally grown SiO2. J. Appl. Phys. 62(6), 2582–2584 (1987)CrossRef J.C. Barbour, AEMJ Fischer, J.F. van der Veen, The thin-film reaction between Ti and thermally grown SiO2. J. Appl. Phys. 62(6), 2582–2584 (1987)CrossRef
26.
Zurück zum Zitat S.W. Russell, J.W. Strane, J.W. Mayer, S.Q. Wang, Reaction kinetics in the Ti/SiO2 system and Ti thickness dependence on reaction rate. J. Appl. Phys. 76(1), 257–263 (1994)CrossRef S.W. Russell, J.W. Strane, J.W. Mayer, S.Q. Wang, Reaction kinetics in the Ti/SiO2 system and Ti thickness dependence on reaction rate. J. Appl. Phys. 76(1), 257–263 (1994)CrossRef
27.
Zurück zum Zitat K. Yokota, T. Yamada, Preparation of titanium-dioxide films by heating titanium/silicon-dioxide structures on silicon in oxygen. Mat. Res. Innov. 2, 103–109 (1998)CrossRef K. Yokota, T. Yamada, Preparation of titanium-dioxide films by heating titanium/silicon-dioxide structures on silicon in oxygen. Mat. Res. Innov. 2, 103–109 (1998)CrossRef
28.
Zurück zum Zitat J.O. Olowolafe, R.E. Jones Jr., A.C. Campbell, R.I. Hetide, C.J. Mogab, R.B. Gregory, Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions. J. Appl. Phys. 73(4), 1764–1772 (1993)CrossRef J.O. Olowolafe, R.E. Jones Jr., A.C. Campbell, R.I. Hetide, C.J. Mogab, R.B. Gregory, Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions. J. Appl. Phys. 73(4), 1764–1772 (1993)CrossRef
29.
Zurück zum Zitat M. Cordill, D. Bahr, N.R. Moody, W.W. Gerberich, Recent developments in thin film adhesion measurement. IEEE Trans. Dev. Mater. Reliab. 4(2), 163–168 (2004)CrossRef M. Cordill, D. Bahr, N.R. Moody, W.W. Gerberich, Recent developments in thin film adhesion measurement. IEEE Trans. Dev. Mater. Reliab. 4(2), 163–168 (2004)CrossRef
30.
Zurück zum Zitat M. Grosser, U. Schmid, The impact of annealing temperature and time on the electrical performance of Ti/Pt thin films. Appl. Surf. Sci. 256, 4564–4569 (2010)CrossRef M. Grosser, U. Schmid, The impact of annealing temperature and time on the electrical performance of Ti/Pt thin films. Appl. Surf. Sci. 256, 4564–4569 (2010)CrossRef
31.
Zurück zum Zitat L.E. Sanchez, S. Wu, I.K. Naik, Observations of ferroelectric polarization reversal in sol-gel processed very thin lead-zirconate-titanate films. Appl. Phys. Lett. 56(24), 2399–2401 (1990)CrossRef L.E. Sanchez, S. Wu, I.K. Naik, Observations of ferroelectric polarization reversal in sol-gel processed very thin lead-zirconate-titanate films. Appl. Phys. Lett. 56(24), 2399–2401 (1990)CrossRef
32.
Zurück zum Zitat S.S. Dana, K.F. Etzold, J. Clabes, Crystallization of sol-gel derived lead zirconate titanate thin films. J. Appl. Phys. 69(8), 4398–4403 (1991)CrossRef S.S. Dana, K.F. Etzold, J. Clabes, Crystallization of sol-gel derived lead zirconate titanate thin films. J. Appl. Phys. 69(8), 4398–4403 (1991)CrossRef
33.
Zurück zum Zitat R.W. Schwartz, B.A. Tuttle, D.H. Doughty, C.E. Land, D.C. Goodnow, C.L. Hernandez, T.J. Zender, S.L. Martinez, Preparation and characterization of chemically derived (Pb, La)TiO3 thin films. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 38(6), 677–683 (1991)CrossRef R.W. Schwartz, B.A. Tuttle, D.H. Doughty, C.E. Land, D.C. Goodnow, C.L. Hernandez, T.J. Zender, S.L. Martinez, Preparation and characterization of chemically derived (Pb, La)TiO3 thin films. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 38(6), 677–683 (1991)CrossRef
34.
Zurück zum Zitat GACM Spierings, MJE Ulenaers, GLM Kampschoer, HAM van Hal, P.K. Larsen, Preparation and ferroelectric properties of Pb0.53Ti0.47O3 thin films by spin coating and metalorganic decomposition. J. Appl. Phys. 70(4), 2290–2298 (1991)CrossRef GACM Spierings, MJE Ulenaers, GLM Kampschoer, HAM van Hal, P.K. Larsen, Preparation and ferroelectric properties of Pb0.53Ti0.47O3 thin films by spin coating and metalorganic decomposition. J. Appl. Phys. 70(4), 2290–2298 (1991)CrossRef
35.
Zurück zum Zitat L.F. Francis, D.A. Payne, Thin layer dielectrics in the Pb[(Mg1/3Nb2/3)1–xTix]O3 system. J. Am. Ceram. Soc. 74(12), 3000–3010 (1991)CrossRef L.F. Francis, D.A. Payne, Thin layer dielectrics in the Pb[(Mg1/3Nb2/3)1–xTix]O3 system. J. Am. Ceram. Soc. 74(12), 3000–3010 (1991)CrossRef
36.
Zurück zum Zitat B.A. Tuttle, T.J. Headley, B.C. Bunker, R.W. Schwartz, T.J. Zender, C.L. Hernandez, D.C. Goodnow, R.J. Tissot, J. Michael, A.H. Carim, Microstructural evolution of Pb(Zr, Ti)O3 thin films prepared by hybrid metallo-organic decomposition. J. Mater. Res. 7(7), 1876–1882 (1992)CrossRef B.A. Tuttle, T.J. Headley, B.C. Bunker, R.W. Schwartz, T.J. Zender, C.L. Hernandez, D.C. Goodnow, R.J. Tissot, J. Michael, A.H. Carim, Microstructural evolution of Pb(Zr, Ti)O3 thin films prepared by hybrid metallo-organic decomposition. J. Mater. Res. 7(7), 1876–1882 (1992)CrossRef
37.
Zurück zum Zitat M. Huffman, J.P. Goral, M.M. Al-Jassim, C. Echer, Structural and chemical composition investigation of thin lead zirconate titanate films. J. Vac. Sci. Technol. A 10(4), 1584–1591 (1992)CrossRef M. Huffman, J.P. Goral, M.M. Al-Jassim, C. Echer, Structural and chemical composition investigation of thin lead zirconate titanate films. J. Vac. Sci. Technol. A 10(4), 1584–1591 (1992)CrossRef
38.
Zurück zum Zitat M. Klee, R. Eusemann, R. Waser, W. Brand, V. van Hal, Processing and electrical properties of Pb (ZrxTi1–x)O3 (x = 0.2–0.75) films: comparison of metallo-organic decomposition and sol-gel processes. J. Appl. Phys. 72(4), 1566–1576 (1992)CrossRef M. Klee, R. Eusemann, R. Waser, W. Brand, V. van Hal, Processing and electrical properties of Pb (ZrxTi1–x)O3 (x = 0.2–0.75) films: comparison of metallo-organic decomposition and sol-gel processes. J. Appl. Phys. 72(4), 1566–1576 (1992)CrossRef
39.
Zurück zum Zitat GACM Spierings, GJM Dormans, WGJ Moors, MJE Ulenaers, P.K. Larsen, Stresses in Pt/Pb(Zr,Ti)O3/Pt thin-film stacks for integrated ferroeiectric capacitors. J. Appl. Phys. 70(3), 1920–1933 (1995) GACM Spierings, GJM Dormans, WGJ Moors, MJE Ulenaers, P.K. Larsen, Stresses in Pt/Pb(Zr,Ti)O3/Pt thin-film stacks for integrated ferroeiectric capacitors. J. Appl. Phys. 70(3), 1920–1933 (1995)
40.
Zurück zum Zitat S. Kim, H. Kim, M. Lee, W. Lee, Investigation of Pt/Ti bottom electrodes for Pb(Zr,Ti)O3 films. Jpn. J. Appl. Phys. 1 36(1A), 294–300 (1997)CrossRef S. Kim, H. Kim, M. Lee, W. Lee, Investigation of Pt/Ti bottom electrodes for Pb(Zr,Ti)O3 films. Jpn. J. Appl. Phys. 1 36(1A), 294–300 (1997)CrossRef
41.
Zurück zum Zitat T. Hase, T. Shiosaki, Preparation and switching kinetics of Pb(Zr, Ti)O3 thin films deposited by reactive sputtering. Jpn. J. Appl. Phys. 30(9B), 2159–2162 (1991)CrossRef T. Hase, T. Shiosaki, Preparation and switching kinetics of Pb(Zr, Ti)O3 thin films deposited by reactive sputtering. Jpn. J. Appl. Phys. 30(9B), 2159–2162 (1991)CrossRef
42.
Zurück zum Zitat S. Chen, I. Chen, Temperature-time texture transition of Pb(Zr1 – xTix)O3 thin films: II, heat treatment and compositional effects. J. Am. Ceram. Soc. 77(9), 2337–2344 (1994)CrossRef S. Chen, I. Chen, Temperature-time texture transition of Pb(Zr1 – xTix)O3 thin films: II, heat treatment and compositional effects. J. Am. Ceram. Soc. 77(9), 2337–2344 (1994)CrossRef
43.
Zurück zum Zitat K. Aoki, Y. Fukuda, K. Numata, A. Nishimura, Ferroelectric properties of crystalline-oriented lead-zirconate-titanates formed by sol-gel deposition technique. Jpn. J. Appl. Phys. 1 34(2B), 746–751 (1995)CrossRef K. Aoki, Y. Fukuda, K. Numata, A. Nishimura, Ferroelectric properties of crystalline-oriented lead-zirconate-titanates formed by sol-gel deposition technique. Jpn. J. Appl. Phys. 1 34(2B), 746–751 (1995)CrossRef
44.
Zurück zum Zitat M. Tsukada, M. Mukaida, S. Miyazawa, Structure and dielectric properties of Ba(Ti1‑xSnx)O3 thin films. Jpn. J. Appl. Phys. 1 35(9B), 4908–4912 (1996)CrossRef M. Tsukada, M. Mukaida, S. Miyazawa, Structure and dielectric properties of Ba(Ti1‑xSnx)O3 thin films. Jpn. J. Appl. Phys. 1 35(9B), 4908–4912 (1996)CrossRef
45.
Zurück zum Zitat G.R. Fox, S. Trolier-McKinstry, L.M. Casas, S.B. Krupanidhi, Pt/Ti/SiO2/Si substrates. J. Mater. Res. 10(6), 1508–1515 (1995)CrossRef G.R. Fox, S. Trolier-McKinstry, L.M. Casas, S.B. Krupanidhi, Pt/Ti/SiO2/Si substrates. J. Mater. Res. 10(6), 1508–1515 (1995)CrossRef
46.
Zurück zum Zitat C. Chen, D. Huang, W. Zhu, Y. Feng, X. Wu, Reaction products and oxide thickness formed by Ti out-diffusion and oxidization in poly-Pt/Ti/SiO2/Si with oxide films deposited. Appl. Surf. Sci. 252, 7590–7593 (2006)CrossRef C. Chen, D. Huang, W. Zhu, Y. Feng, X. Wu, Reaction products and oxide thickness formed by Ti out-diffusion and oxidization in poly-Pt/Ti/SiO2/Si with oxide films deposited. Appl. Surf. Sci. 252, 7590–7593 (2006)CrossRef
47.
Zurück zum Zitat U. Scheithauer, W. Hosler, R. Bruchhaus, Combined AES/factor analysis and RBS investigation of a thermally treated Pt/Ti metallisation on SiO2,. Fresenius J. Anal. Chem. 346, 305–307 (1993)CrossRef U. Scheithauer, W. Hosler, R. Bruchhaus, Combined AES/factor analysis and RBS investigation of a thermally treated Pt/Ti metallisation on SiO2,. Fresenius J. Anal. Chem. 346, 305–307 (1993)CrossRef
48.
Zurück zum Zitat H.N. Al-Shareef, D. Dimos, B.A. Tuttle, M.V. Raymond, Metallization schemes for dielectric thin film capacitors. J. Mater. Res. 12(2), 347–354 (1997)CrossRef H.N. Al-Shareef, D. Dimos, B.A. Tuttle, M.V. Raymond, Metallization schemes for dielectric thin film capacitors. J. Mater. Res. 12(2), 347–354 (1997)CrossRef
49.
Zurück zum Zitat E.M. Griswold, L. Weaver, M. Sayer, I.D. Calder, Phase transformations in rapid thermal processed lead zirconate titanate., J. Mater. Res. 10(12), 3149–3159 E.M. Griswold, L. Weaver, M. Sayer, I.D. Calder, Phase transformations in rapid thermal processed lead zirconate titanate., J. Mater. Res. 10(12), 3149–3159
50.
Zurück zum Zitat R. Bruchhaus, W. Wersing, Integrated ferroelectric thin films for electronic devices of the future. Proc SPIE Third Int. Conf. Thin Film Phys. Appl. 3175, 316–321 (1998)CrossRef R. Bruchhaus, W. Wersing, Integrated ferroelectric thin films for electronic devices of the future. Proc SPIE Third Int. Conf. Thin Film Phys. Appl. 3175, 316–321 (1998)CrossRef
51.
Zurück zum Zitat S.A. Impey, Z. Huang, A. Patel, R. Beanland, N.M. Shorrocks, R. Watton, R.W. Whatmore, Microstructural characterization of sol–gel lead–zirconate–titanate thin films. J. Appl. Phys. 83(4), 2202–2208 (1998)CrossRef S.A. Impey, Z. Huang, A. Patel, R. Beanland, N.M. Shorrocks, R. Watton, R.W. Whatmore, Microstructural characterization of sol–gel lead–zirconate–titanate thin films. J. Appl. Phys. 83(4), 2202–2208 (1998)CrossRef
52.
Zurück zum Zitat K. Brooks, R. Klissurska, P. Moeckli, N. Setter, Investigation of Pb(Zr0.70Ti0.30)O3 thin films of difference textures on Ti/Pt electrodes. Microelectron. Eng. 29, 293–296 (1995)CrossRef K. Brooks, R. Klissurska, P. Moeckli, N. Setter, Investigation of Pb(Zr0.70Ti0.30)O3 thin films of difference textures on Ti/Pt electrodes. Microelectron. Eng. 29, 293–296 (1995)CrossRef
53.
Zurück zum Zitat G.R. Fox, S. Summerfelt, in Magnetic and Electronic Films—Microstructure, Texture and Application to Data Storage, ed. by P.W. DeHaven, D.P. Field, S.D. Harkness, J.A. Sutliff, J.A. Szpunar, L. Tang, T. Thomson, V.D. Vaudin. Model relating thin film PZT crystallographic texture to ferroelectric switching performance. Materials Research Society Proceedings, Pittsburgh, PA, vol. 721 (2002), pp. 145–151 G.R. Fox, S. Summerfelt, in Magnetic and Electronic Films—Microstructure, Texture and Application to Data Storage, ed. by P.W. DeHaven, D.P. Field, S.D. Harkness, J.A. Sutliff, J.A. Szpunar, L. Tang, T. Thomson, V.D. Vaudin. Model relating thin film PZT crystallographic texture to ferroelectric switching performance. Materials Research Society Proceedings, Pittsburgh, PA, vol. 721 (2002), pp. 145–151
54.
Zurück zum Zitat H. Achard, H. Mace, L. Peccoud, Device processing and integration of ferroelectric thin films for memory applications. Microelectron. Eng. 29, 19–28 (1995)CrossRef H. Achard, H. Mace, L. Peccoud, Device processing and integration of ferroelectric thin films for memory applications. Microelectron. Eng. 29, 19–28 (1995)CrossRef
55.
Zurück zum Zitat R.E. Jones Jr., P.D. Maniar, J.L. Dupuie, J. Kim, R. Moazzami, J. Witowski, M.L. Kottke, N.C. Saha, R.B. Gregory, Impact of a Ti adhesion layer on Pt/PZT/Pt capacitors. Mater. Res. Soc. Proc. 361, 223–228 (1995)CrossRef R.E. Jones Jr., P.D. Maniar, J.L. Dupuie, J. Kim, R. Moazzami, J. Witowski, M.L. Kottke, N.C. Saha, R.B. Gregory, Impact of a Ti adhesion layer on Pt/PZT/Pt capacitors. Mater. Res. Soc. Proc. 361, 223–228 (1995)CrossRef
56.
Zurück zum Zitat K. Sreenivas, I. Reaney, T. Maeder, N. Setter, C. Jagadish, R.G. Elliman, Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration. J. Appl. Phys. 75(1), 232–239 (1994)CrossRef K. Sreenivas, I. Reaney, T. Maeder, N. Setter, C. Jagadish, R.G. Elliman, Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration. J. Appl. Phys. 75(1), 232–239 (1994)CrossRef
57.
Zurück zum Zitat Z. Song, N. Chong, LHW Chan, C. Choy, C. Lin, Thermal stability of electrode stacks for application in oxide film devices. Thin Solid Films 406, 268–274 (2002) Z. Song, N. Chong, LHW Chan, C. Choy, C. Lin, Thermal stability of electrode stacks for application in oxide film devices. Thin Solid Films 406, 268–274 (2002)
58.
Zurück zum Zitat G. Fox, K. Suu, High temperature deposition of Pt/TiOx for bottom electrodes, US patent 6, 682,772 (2004) G. Fox, K. Suu, High temperature deposition of Pt/TiOx for bottom electrodes, US patent 6, 682,772 (2004)
59.
Zurück zum Zitat N. Abe, Y. Otani, M. Miyake, M. Kurita, H. Takeda, S. Okamura, T. Shiosaki, Influence of a TiO2 adhesion layer on the structure and the orientation of a Pt layer in Pt/TiO2/SiO2/Si structures. Jpn. J. Appl. Phys. 1 42(5A), 2791–2795 (2003) N. Abe, Y. Otani, M. Miyake, M. Kurita, H. Takeda, S. Okamura, T. Shiosaki, Influence of a TiO2 adhesion layer on the structure and the orientation of a Pt layer in Pt/TiO2/SiO2/Si structures. Jpn. J. Appl. Phys. 1 42(5A), 2791–2795 (2003)
60.
Zurück zum Zitat D.M. Potrepka, G.R. Fox, L.M. Sanchez, R.G. Polcawich, in Microelectromechanical Systems—Materials and Devices IV. Pt/TiO2 growth templates for PZT films and MEMS devices. Mater Res Soc Symp Proceedings, vol. 1299 (Cambridge University Press, Cambridge, 2011), pp. 67–72 D.M. Potrepka, G.R. Fox, L.M. Sanchez, R.G. Polcawich, in Microelectromechanical Systems—Materials and Devices IV. Pt/TiO2 growth templates for PZT films and MEMS devices. Mater Res Soc Symp Proceedings, vol. 1299 (Cambridge University Press, Cambridge, 2011), pp. 67–72
61.
Zurück zum Zitat F. Zhang, Z. Zheng, X. Ding, Y. Mao, Y. Chen, Z. Zhou, S. Yang, X. Liu, Highly oriented rutile-type TiO2 films synthesized by ion beam enhanced deposition. J. Vac. Sci. Technol. A 15(4), 1824–1827 (1997)CrossRef F. Zhang, Z. Zheng, X. Ding, Y. Mao, Y. Chen, Z. Zhou, S. Yang, X. Liu, Highly oriented rutile-type TiO2 films synthesized by ion beam enhanced deposition. J. Vac. Sci. Technol. A 15(4), 1824–1827 (1997)CrossRef
62.
Zurück zum Zitat C. Ting, S. Chen, D. Liu, Preferential growth of thin rutile TiO2 films upon thermal oxidation of sputtered Ti films. Thin Solid Films 402, 290–295 (2002)CrossRef C. Ting, S. Chen, D. Liu, Preferential growth of thin rutile TiO2 films upon thermal oxidation of sputtered Ti films. Thin Solid Films 402, 290–295 (2002)CrossRef
63.
Zurück zum Zitat Y. Zhang, X. Ma, P. Chen, D. Yang, Crystallization behaviors of TiO2 films derived from thermal oxidation of evaporated and sputtered titanium films. J. Alloys Compd. 480, 938–941 (2009)CrossRef Y. Zhang, X. Ma, P. Chen, D. Yang, Crystallization behaviors of TiO2 films derived from thermal oxidation of evaporated and sputtered titanium films. J. Alloys Compd. 480, 938–941 (2009)CrossRef
64.
Zurück zum Zitat M.C. Burrell, N.R. Armstrong, Oxides formed on polycrystalline titanium thin film surfaces: rates of formation and composition of oxides formed at low and high O2 partial pressures. Langmuir 2(1), 30–36 (1986)CrossRef M.C. Burrell, N.R. Armstrong, Oxides formed on polycrystalline titanium thin film surfaces: rates of formation and composition of oxides formed at low and high O2 partial pressures. Langmuir 2(1), 30–36 (1986)CrossRef
65.
Zurück zum Zitat C.M. Herzinger, B. Johs, W.A. McGahan, J.A. Woollam, Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigaton. J. Appl. Phys. 83(6), 3323–3336 (1998)CrossRef C.M. Herzinger, B. Johs, W.A. McGahan, J.A. Woollam, Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigaton. J. Appl. Phys. 83(6), 3323–3336 (1998)CrossRef
66.
Zurück zum Zitat E.D. Palik, Handbook of Optical Constants of Solids, vol. 1 (Academic Press, New York, 1985), p. 759 E.D. Palik, Handbook of Optical Constants of Solids, vol. 1 (Academic Press, New York, 1985), p. 759
67.
Zurück zum Zitat B. Chapman, Glow Discharge Process: Sputtering and Plasma Etching (Wiley, New York, 1980) B. Chapman, Glow Discharge Process: Sputtering and Plasma Etching (Wiley, New York, 1980)
68.
Zurück zum Zitat M. Ohring, Materials Science of Thin Films. (Academic Press, San Diego, CA, 1991) M. Ohring, Materials Science of Thin Films. (Academic Press, San Diego, CA, 1991)
69.
Zurück zum Zitat International Center for Diffraction Data, PDF-2, Card No. 21-1276. Newtown Square, PA International Center for Diffraction Data, PDF-2, Card No. 21-1276. Newtown Square, PA
70.
Zurück zum Zitat B.D. Cullity, Elements of X-ray Diffraction. (Addison-Wesley Publishing Company, Reading, 1978) B.D. Cullity, Elements of X-ray Diffraction. (Addison-Wesley Publishing Company, Reading, 1978)
71.
Zurück zum Zitat A. Guinier, X-ray Diffraction in Crystals, Imperfect Crystals, and Amorphous Bodies. (Dover Publishing, New York, 1994) A. Guinier, X-ray Diffraction in Crystals, Imperfect Crystals, and Amorphous Bodies. (Dover Publishing, New York, 1994)
72.
Zurück zum Zitat A.J. Fox, B. Drawl, G.R. Fox, B.J. Gibbons, S. Trolier-McKinstry, Control of crystallographic texture and surface morphology of Pt/TiO2 templates for enhanced PZT thin film texture. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 62(1), 56–61 (2015)CrossRef A.J. Fox, B. Drawl, G.R. Fox, B.J. Gibbons, S. Trolier-McKinstry, Control of crystallographic texture and surface morphology of Pt/TiO2 templates for enhanced PZT thin film texture. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 62(1), 56–61 (2015)CrossRef
73.
Zurück zum Zitat International Center for Diffraction Data, PDF-2, Card No. 04-0802. Newtown Square, PA International Center for Diffraction Data, PDF-2, Card No. 04-0802. Newtown Square, PA
74.
Zurück zum Zitat L.M. Sanchez, D.M. Potrepka, G.R. Fox, I. Takeuchi, K. Wang, L.A. Bendersky, R.G. Polcawich, Optimization of PbTiO3 seed layers and Pt metallization for PZT based piezoMEMS actuators. J. Mater. Res. 28(14), 1920–1931 (2013)CrossRef L.M. Sanchez, D.M. Potrepka, G.R. Fox, I. Takeuchi, K. Wang, L.A. Bendersky, R.G. Polcawich, Optimization of PbTiO3 seed layers and Pt metallization for PZT based piezoMEMS actuators. J. Mater. Res. 28(14), 1920–1931 (2013)CrossRef
75.
Zurück zum Zitat P. Muralt, Texture control and seeded nucleation of nanosize structures of ferroelectric thin films. J. Appl. Phys. 100(5), 051605 (2006)CrossRef P. Muralt, Texture control and seeded nucleation of nanosize structures of ferroelectric thin films. J. Appl. Phys. 100(5), 051605 (2006)CrossRef
76.
Zurück zum Zitat G.R. Fox, in Ferroelectric Thin Films VIII ed. by R.W. Schwartz, P.C. McIntyre, Y. Miyasaka, S.R. Summerfelt, D. Wouters. Effect of crystallographic texture on ferroelectric performance of PZT thin films. Mater Res Soc Proc, Pittsburgh, PA vol. 596, pp. 205–210 (2000)CrossRef G.R. Fox, in Ferroelectric Thin Films VIII ed. by R.W. Schwartz, P.C. McIntyre, Y. Miyasaka, S.R. Summerfelt, D. Wouters. Effect of crystallographic texture on ferroelectric performance of PZT thin films. Mater Res Soc Proc, Pittsburgh, PA vol. 596, pp. 205–210 (2000)CrossRef
Metadaten
Titel
Dependence of {111}-textured Pt electrode properties on TiO2 seed layers formed by thermal oxidation
verfasst von
Glen R. Fox
Daniel M. Potrepka
Ronald G. Polcawich
Publikationsdatum
20.10.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 1/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-7930-2

Weitere Artikel der Ausgabe 1/2018

Journal of Materials Science: Materials in Electronics 1/2018 Zur Ausgabe

Neuer Inhalt