Design and performance analysis of charge plasma TFET for biosensor applications: a simulation study

The paper presents a new design of a CP JLTFET, which is a type of transistor with potential applications in various electronic devices. The proposed CP JLTFET design is aimed at improving the ON current and surface potentials of the device. These improvements are essential for enhancing the device’s functionality. The source and drain regions in the intrinsic silicon material are induced using appropriate metal work functions. This design choice is made for ease of fabrication, which is a critical consideration in semiconductor device manufacturing. The cavity length is varied between 8 and 10 nm, and different dielectric constants are used in the simulation. These variations are designed to optimize the ON state performance of the device, including ON drive current, potential, and electric field. The increase in tunneling of electrons is attributed to high carrier recombination in the channel region. Carrier recombination is a key factor in device behavior and performance. The paper describes the simulation of various electrical parameters of the proposed device. This likely includes drain current, surface potentials, electric field, and energy bands. The excellent performance parameters of the proposed device, when combined with appropriate materials and the introduction of a cavity, make it suitable for sensing applications of biomolecules. The paper suggests that the excellent performance parameters of the proposed device, when combined with appropriate materials and the introduction of a cavity in the device, make it suitable for sensing applications, particularly for detecting biomolecules.