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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 4/2016

20.09.2016

Design and simulation of a semispherical semiconductor to construct a beta-voltaic battery using c-Si and a-Si:H materials with different doping concentration

verfasst von: H. Sadeghi, S. M. Mostajabodavati, A. Eshaghi, D. Rahi

Erschienen in: Journal of Computational Electronics | Ausgabe 4/2016

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Abstract

Investigation of beta-voltaic batteries is a multi-aspect problem, because it involves two dimensions: nuclear and solid state. A beta-voltaic battery converts kinetic energy from beta (\(\upbeta \)) particles into electrical energy, similar to the photovoltaic conversion of photon energy by solar cells. In this work, nuclear simulation was carried out first, and the results were used in subsequent solid-state simulation. The energy conversion process was modeled and simulated using crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H) as beta-voltaic semiconductor substrate. Performance parameters (i.e., open-circuit voltage, short-circuit current, and leakage current) of the c-Si beta-voltaic battery were optimized as functions of doping concentration and temperature. In addition, the effects of doping concentration and defect density on the recombination rate, e–h concentration, and e–h current density for a-Si:H were analyzed.
Vorheriger Artikel Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
Nächster Artikel Structural dependence of the transferred charge density in triboelectric nanogenerators: analytical and numerical study

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Metadaten
Titel
Design and simulation of a semispherical semiconductor to construct a beta-voltaic battery using c-Si and a-Si:H materials with different doping concentration
verfasst von
H. Sadeghi
S. M. Mostajabodavati
A. Eshaghi
D. Rahi
Publikationsdatum
20.09.2016
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 4/2016
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-016-0896-0

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