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2017 | OriginalPaper | Buchkapitel

Design Methodology for an All CMOS Bandgap Voltage Reference Circuit

verfasst von : Ricardo Madeira, Nuno Paulino

Erschienen in: Technological Innovation for Smart Systems

Verlag: Springer International Publishing

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Abstract

The Internet of Thing (IoT) has given rise to the integration of smart systems in the industrial, healthcare, and social environments. These smart systems are often implemented by system-on-chip (SoC) solutions that require power management units, sensors, signal processors, and wireless interfaces. Hence, an independent voltage reference circuit is crucial for obtaining accurate measurements from the sensors and for the proper operation of the SoC. Making, bandgap circuits indispensable in these types of applications. Typically, bandgap circuits are implemented using bipolar transistors to generate two voltages with opposite temperature coefficients (Complementary To Absolute Temperature – CTAT; Proportional do Absolute Temperature - PTAT) which are added resulting in a temperature independent voltage reference. The disadvantage of using bipolar devices is that the power supply voltage must be larger than the ON base-emitter voltage, resulting in voltages larger than 0.7 V. The low power demands of IoT and of technology scaling, have forced lower values for the power supply voltage and thus new bandgap circuits using only CMOS transistors have gathered increased interest. In these, the MOS transistors operate in the weak inversion region where its current has an exponential relation with its gate-to-source voltage, as in the bipolar devices. Making it possible to generate both the PTAT and the CTAT voltages and thus produce a temperature independent voltage reference. This paper describes a design methodology of an all CMOS bandgap voltage reference circuit, in which one of the transistors works in the moderate region and the other in the weak inversion, to achieve the lowest possible voltage variation with temperature. The circuit produces a voltage reference of 0.45 V from a minimum power supply voltage of 0.6 V, with a total variation of 1.54 mV, over a temperature range of −40 to 100°C, resulting in a temperature coefficient of 24 ppm/°C, and a power supply rejection ratio (PSRR) of −40 dB.

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Literatur
2.
Zurück zum Zitat Pereira, M.S., Costa, J.E.N., Santos, M., Vaz, J.C.: A 1.1 µA voltage reference circuit with high PSRR and temperature compensation. In: 2015 Conference on Design Circuits Integrated Systems (DCIS), pp. 1–4, (2015). doi:10.1109/DCIS.2015.7388564 Pereira, M.S., Costa, J.E.N., Santos, M., Vaz, J.C.: A 1.1 µA voltage reference circuit with high PSRR and temperature compensation. In: 2015 Conference on Design Circuits Integrated Systems (DCIS), pp. 1–4, (2015). doi:10.​1109/​DCIS.​2015.​7388564
3.
Zurück zum Zitat Jiang, Y., Lee, E.K.F.: A low voltage low 1/f noise CMOS bandgap reference. In: 2005 IEEE International Symposium on Circuits System, vol. 4, pp. 3877–3880 (2005). doi:10.1109/ISCAS.2005.1465477 Jiang, Y., Lee, E.K.F.: A low voltage low 1/f noise CMOS bandgap reference. In: 2005 IEEE International Symposium on Circuits System, vol. 4, pp. 3877–3880 (2005). doi:10.​1109/​ISCAS.​2005.​1465477
5.
Zurück zum Zitat Quendera, F., Paulino, N.: A low voltage low power temperature sensor using a 2nd order delta-sigma modulator. In: 2015 Conference on Design of Circuits Integrated Systems (DCIS), pp. 1–6 (2015). doi:10.1109/DCIS.2015.7388608 Quendera, F., Paulino, N.: A low voltage low power temperature sensor using a 2nd order delta-sigma modulator. In: 2015 Conference on Design of Circuits Integrated Systems (DCIS), pp. 1–6 (2015). doi:10.​1109/​DCIS.​2015.​7388608
6.
Zurück zum Zitat Banba, H., Shiga, H., Umezawa, A., et al.: A CMOS bandgap reference circuit with sub-1-V operation. IEEE J. Solid-State Circuits 34, 670–674 (1999)CrossRef Banba, H., Shiga, H., Umezawa, A., et al.: A CMOS bandgap reference circuit with sub-1-V operation. IEEE J. Solid-State Circuits 34, 670–674 (1999)CrossRef
7.
Zurück zum Zitat Ytterdal, T.: CMOS bandgap voltage reference circuit for supply voltages down to 0.6 V. Electron. Lett. 39, 1427–1428 (2003)CrossRef Ytterdal, T.: CMOS bandgap voltage reference circuit for supply voltages down to 0.6 V. Electron. Lett. 39, 1427–1428 (2003)CrossRef
8.
Zurück zum Zitat Lin, F.T., Tsai, J.H., Liao, Y.T.: A 3 μW, 0.65 V regulator with an embedded temperature compensated voltage reference. In: 2016 13th International Conference on Synthesis, Modeling and Analysis Simulation Methods Applications to Circuit Design, pp. 1–4 (2016). doi:10.1109/SMACD.2016.7520647 Lin, F.T., Tsai, J.H., Liao, Y.T.: A 3 μW, 0.65 V regulator with an embedded temperature compensated voltage reference. In: 2016 13th International Conference on Synthesis, Modeling and Analysis Simulation Methods Applications to Circuit Design, pp. 1–4 (2016). doi:10.​1109/​SMACD.​2016.​7520647
Metadaten
Titel
Design Methodology for an All CMOS Bandgap Voltage Reference Circuit
verfasst von
Ricardo Madeira
Nuno Paulino
Copyright-Jahr
2017
DOI
https://doi.org/10.1007/978-3-319-56077-9_43