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Microsystem Technologies
Erschienen in: Microsystem Technologies 9/2018

02.04.2018 | Technical Paper

Design of a biaxial high frequency-ratio low-g MEMS accelerometer

verfasst von: Xiaowei Shan, Jorge Angeles, James Richard Forbes

Erschienen in: Microsystem Technologies | Ausgabe 9/2018

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Abstract

The optimum design of a biaxial MEMS accelerometer for low-g applications, along with its fabrication and testing, is reported in this paper. The monolithic structure was optimally designed based on a fully symmetric architecture with a high frequency ratio between the insensitive and the sensitive axes. The sensing substructure was designed, in turn, with a configurable comb-structure for simultaneous biaxial capacitive sensing. This accelerometer was fabricated with high precision and tested under 1-g acceleration, both statically and dynamically. The corresponding static sensitivity is 1.55 μm/g, while the capacitance sensitivity is 113.5 fF/g.
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Fußnoten
1
A \(\Pi \)-joint is a parallelogram four-bar linkage, allowing for pure translation of one link with respect to its opposite.
 
2
“WxPy”: the letters x and y indicate the wafer thickness (in μm) and the polygonal shape of the structure, respectively.
 
3
Borrowing “v” from French “vide”, for “gap”, as “g” is reserved for the gravity acceleration.
 
4
Abbreviation for “motion in the insensitive directions”.
 
5
i.e., Rotation about an out-of-plane axis, with a similar meaning for in-plane rotations.
 
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Metadaten
Titel
Design of a biaxial high frequency-ratio low-g MEMS accelerometer
verfasst von
Xiaowei Shan
Jorge Angeles
James Richard Forbes
Publikationsdatum
02.04.2018
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 9/2018
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-018-3862-x

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