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Journal of Electronic Testing
Erschienen in: Journal of Electronic Testing 4/2021

25.08.2021

Design of Radiation Hardened Latch and Flip-Flop with Cost-Effectiveness for Low-Orbit Aerospace Applications

verfasst von: Aibin Yan, Aoran Cao, Zhelong Xu, Jie Cui, Tianming Ni, Patrick Girard, Xiaoqing Wen

Erschienen in: Journal of Electronic Testing | Ausgabe 4/2021

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Abstract

To meet the requirements of both cost-effectiveness and high reliability for low-orbit aerospace applications, this paper first presents a radiation hardened latch design, namely HLCRT. The latch mainly consists of a single-node-upset self-recoverable cell, a 3-input C-element, and an inverter. If any two inputs of the C-element suffer from a double-node-upset (DNU), or if one node inside the cell together with another node outside the cell suffer from a DNU, the latch still has a correct value on its output node, i.e., the latch is effectively DNU hardened. Based on the latch, this paper also presents a flip-flop, namely HLCRT-FF that can tolerate SNUs and DNUs. Simulation results demonstrate the SNU/DNU tolerance capability of the proposed HLCRT latch and HLCRT-FF. Moreover, due to the use of a few transistors, clock gating technologies, and high-speed paths, the proposed HLCRT latch and HLCRT-FF approximately save 61% and 92% of delay, 45% and 55% of power, 28% and 28% of area, and 84% and 97% of delay-power-area product on average, compared to state-of-the-art DNU hardened latch/flip-flop designs, respectively.
Vorheriger Artikel SC-COTD: Hardware Trojan Detection Based on Sequential/Combinational Testability Features using Ensemble Classifier
Nächster Artikel Fault-Aware Dependability Enhancement Techniques for Phase Change Memory

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Metadaten
Titel
Design of Radiation Hardened Latch and Flip-Flop with Cost-Effectiveness for Low-Orbit Aerospace Applications
verfasst von
Aibin Yan
Aoran Cao
Zhelong Xu
Jie Cui
Tianming Ni
Patrick Girard
Xiaoqing Wen
Publikationsdatum
25.08.2021
Verlag
Springer US
Erschienen in
Journal of Electronic Testing / Ausgabe 4/2021
Print ISSN: 0923-8174
Elektronische ISSN: 1573-0727
DOI
https://doi.org/10.1007/s10836-021-05962-0

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