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Erschienen in:
07.10.2016
Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer
Erschienen in: Journal of Computational Electronics | Ausgabe 4/2016
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Abstract
This work proposes a GaN-based vertical heterostructure field-effect transistor with composite insulated current-blocking layer (GaN CCBL-VHFET) to improve the breakdown voltage (BV) of the current aperture vertical electron transistor (CAVET) and obtain high CBL performance. When utilizing a composite current-blocking layer, the electric field (E-field) discontinuity at the CBL/low-k dielectric interface results in a more uniform E-field distribution along the GaN buffer layer, significantly improving the BV. Simulation results show that the BV and ON-resistance (\(R_{\mathrm{ON}}\)) of the device with two low-k dielectric layers are 1744 V and 0.91 m\(\Omega \,\mathrm{cm}^{2}\), respectively. Furthermore, the average breakdown E-field is extremely high, reaching 291 V/\({\upmu }\)m. Compared with the conventional GaN CAVET, the BV of the GaN CCBL-VHFET increases by about 94 % while retaining low \(R_{\mathrm{ON}}\). Furthermore, the challenge of activating Mg in the CBL is avoided for this device structure.