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1999 | OriginalPaper | Buchkapitel

Determination of Impurity and Carrier Concentrations

verfasst von : Professor Dr. Hadis Morkoç

Erschienen in: Nitride Semiconductors and Devices

Verlag: Springer Berlin Heidelberg

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When impurities such as donors and acceptors are introduced into a semiconductor, they produce levels within the energy gap. The energy of a level with respect to the edge of the conduction band in the case of donors, and the valence band in the case of acceptors is called the ionization energy. The simplest calculation of an impurity energy level is based on the hydrogenic model.

Metadaten
Titel
Determination of Impurity and Carrier Concentrations
verfasst von
Professor Dr. Hadis Morkoç
Copyright-Jahr
1999
Verlag
Springer Berlin Heidelberg
DOI
https://doi.org/10.1007/978-3-642-58562-3_7

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