1999 | OriginalPaper | Buchkapitel
Determination of Impurity and Carrier Concentrations
verfasst von : Professor Dr. Hadis Morkoç
Erschienen in: Nitride Semiconductors and Devices
Verlag: Springer Berlin Heidelberg
Enthalten in: Professional Book Archive
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When impurities such as donors and acceptors are introduced into a semiconductor, they produce levels within the energy gap. The energy of a level with respect to the edge of the conduction band in the case of donors, and the valence band in the case of acceptors is called the ionization energy. The simplest calculation of an impurity energy level is based on the hydrogenic model.