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Erschienen in: Journal of Materials Science: Materials in Electronics 11/2018

29.03.2018

Determining the sub-surface damage of CdTe single crystals after lapping

verfasst von: O. Šik, L. Škvarenina, O. Caha, P. Moravec, P. Škarvada, E. Belas, L. Grmela

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2018

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Abstract

We introduce an affordable and easy-to-implement method of determining the thickness of a mechanically damaged layer on the surface of a cadmium telluride single crystal after mechanical lapping. This method is based on This method is based on different usage of already known defect-revealing etchants: the side projection of the lapped surface. A comparison of developed etch pit patterns in the vicinity of the lapped side etched by the Everson solution, Nakagawa solution, Hähnert and Schenk solution, Saucedo solution, Inoue E-Ag II solution and FeCl3 is provided. The most commonly used defect-revealing etchants the Nakagawa and Everson solutions—did not show any trend of etch pit formation towards a mechanically damaged surface. On the other hand, the Saucedo, FeCl3 and E-Ag II etches were successful and achieved similar results. These etchants revealed three distinctive regions of sub-surface damage: (i) a severely polycrystalline 50 µm deep damaged region with micro cracks. This region was best revealed by the FeCl3 etch. (ii) A region of plastic deformations that is 180 µm deep. This region was best revealed by the E-Ag etch. (iii) A region free from mechanical damage. High-resolution X-ray diffraction (HRXRD) further confirmed the results obtained by chemical methods. Full-width at half maximum of the rocking curves decreased from the value of 1000 arcsec on the lapped surface to the value lower than 30 arcsec after the removal of 200 µm of the surface. From HRXRD analysis, the region (i) can be further divided into an approx. 10 µm thin nearly amorphous region, followed by a microcrystalline region. The region (ii) showed mosaic structure consisted of large crystallic blocks, with low angle misorientation from the main diffraction peak. The results showed that the thickness of the mechanically damaged layer is ten times higher than the size of the abrasive used.

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Literatur
1.
Zurück zum Zitat S.M. Tawfik, J. Shim, D. Biechele-Speziale, M. Sharipov, Y.I. Lee, Novel ‘turn off-on’ sensors for highly selective and sensitive detection of spermine based on heparin-quenching of fluorescence CdTe quantum dots-coated amphiphilic thiophene copolymers. Sens. Actuators B 257, 734–744 (2018)CrossRef S.M. Tawfik, J. Shim, D. Biechele-Speziale, M. Sharipov, Y.I. Lee, Novel ‘turn off-on’ sensors for highly selective and sensitive detection of spermine based on heparin-quenching of fluorescence CdTe quantum dots-coated amphiphilic thiophene copolymers. Sens. Actuators B 257, 734–744 (2018)CrossRef
2.
Zurück zum Zitat Ł Rodzik-Czałka et al., Nucleobases functionalized quantum dots and gold nanoparticles bioconjugates as a fluorescence resonance energy transfer (FRET) system—synthesis, characterization and potential applications. J. Colloid Interface Sci. 514, 479–490 (2018)CrossRef Ł Rodzik-Czałka et al., Nucleobases functionalized quantum dots and gold nanoparticles bioconjugates as a fluorescence resonance energy transfer (FRET) system—synthesis, characterization and potential applications. J. Colloid Interface Sci. 514, 479–490 (2018)CrossRef
3.
Zurück zum Zitat A.M. Jimenez, Jimenez et al., Dual-color quantum dots-based simultaneous detection of HPV-HIV co-infection. Sens. Actuators B 258, 295–303 (2018)CrossRef A.M. Jimenez, Jimenez et al., Dual-color quantum dots-based simultaneous detection of HPV-HIV co-infection. Sens. Actuators B 258, 295–303 (2018)CrossRef
4.
Zurück zum Zitat S. Anas et al., Engineered hetero structured arrays of ZnO NanoX (X = discs, rods and wires) and CdTe quantum dots for advanced electron transport applications. Mater. Des. 141, 267–275 (2018)CrossRef S. Anas et al., Engineered hetero structured arrays of ZnO NanoX (X = discs, rods and wires) and CdTe quantum dots for advanced electron transport applications. Mater. Des. 141, 267–275 (2018)CrossRef
5.
Zurück zum Zitat M.A. Baghchesara, R. Yousefi, M. Cheraghizade, F. Jamali-Sheini, A. Sa’Aedi, Photocurrent application of Cd-doped ZnTe nanowires grown in a large scale by a CVD method. Vacuum 123, 131–135 (2016)CrossRef M.A. Baghchesara, R. Yousefi, M. Cheraghizade, F. Jamali-Sheini, A. Sa’Aedi, Photocurrent application of Cd-doped ZnTe nanowires grown in a large scale by a CVD method. Vacuum 123, 131–135 (2016)CrossRef
6.
Zurück zum Zitat A. Kharatzadeh, F. Jamali-Sheini, R. Yousefi, Excellent photocatalytic performance of Zn(1−x)MgxO/rGO nanocomposites under natural sunlight irradiation and their photovoltaic and UV detector applications. Mater. Des. 107, 47–55 (2016)CrossRef A. Kharatzadeh, F. Jamali-Sheini, R. Yousefi, Excellent photocatalytic performance of Zn(1−x)MgxO/rGO nanocomposites under natural sunlight irradiation and their photovoltaic and UV detector applications. Mater. Des. 107, 47–55 (2016)CrossRef
7.
Zurück zum Zitat R. Yousefi, H.R. Azimi, M.R. Mahmoudian, M. Cheraghizade, Highly enhanced photocatalytic performance of Zn(1−x)MgxO/rGO nanostars under sunlight irradiation synthesized by one-pot refluxing method. Adv. Powder Technol. 29(1), 78–85 (2018)CrossRef R. Yousefi, H.R. Azimi, M.R. Mahmoudian, M. Cheraghizade, Highly enhanced photocatalytic performance of Zn(1−x)MgxO/rGO nanostars under sunlight irradiation synthesized by one-pot refluxing method. Adv. Powder Technol. 29(1), 78–85 (2018)CrossRef
8.
Zurück zum Zitat M.A. Baghchesara, M. Cheraghizade, F. Jamali-Sheini, R. Yousefi, Photovoltaic and photodetector performance of metal telluride nanowires grown by a simple CVD method. J. Mater. Sci. Mater. Electron. 28(5), 4475–4480 (2017)CrossRef M.A. Baghchesara, M. Cheraghizade, F. Jamali-Sheini, R. Yousefi, Photovoltaic and photodetector performance of metal telluride nanowires grown by a simple CVD method. J. Mater. Sci. Mater. Electron. 28(5), 4475–4480 (2017)CrossRef
9.
Zurück zum Zitat A.H. Munshi et al., Polycrystalline CdTe photovoltaics with efficiency over 18% through improved absorber passivation and current collection. Sol. Energy Mater. Sol. Cells 176, 9–18 (2018)CrossRef A.H. Munshi et al., Polycrystalline CdTe photovoltaics with efficiency over 18% through improved absorber passivation and current collection. Sol. Energy Mater. Sol. Cells 176, 9–18 (2018)CrossRef
10.
Zurück zum Zitat T. Parodos et al., Effect of dislocations on VLWIR HgCdTe photodiodes. J. Electron. Mater. 36(8), 1068–1076 (2007)CrossRef T. Parodos et al., Effect of dislocations on VLWIR HgCdTe photodiodes. J. Electron. Mater. 36(8), 1068–1076 (2007)CrossRef
11.
Zurück zum Zitat P. Capper, Progress in bulk cadmium mercury telluride over the last 25 years. J. Mater. Sci. Mater. Electron. 26(7), 4380–4388 (2015)CrossRef P. Capper, Progress in bulk cadmium mercury telluride over the last 25 years. J. Mater. Sci. Mater. Electron. 26(7), 4380–4388 (2015)CrossRef
12.
Zurück zum Zitat S.V. Morozov et al., Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 µm. Appl. Phys. Lett., 111(19), 192101 (2017)CrossRef S.V. Morozov et al., Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 µm. Appl. Phys. Lett., 111(19), 192101 (2017)CrossRef
13.
Zurück zum Zitat M. Kopytko, Theoretical performance of mid wavelength HgCdTe(1 0 0) heterostructure infrared detectors. Solid State Electron. 137, 102–108 (2017)CrossRef M. Kopytko, Theoretical performance of mid wavelength HgCdTe(1 0 0) heterostructure infrared detectors. Solid State Electron. 137, 102–108 (2017)CrossRef
14.
Zurück zum Zitat C. Cervera et al., Ultra-low dark current HgCdTe detector in SWIR for space applications. J. Electron. Mater. 46(10), 6142–6149 (2017)CrossRef C. Cervera et al., Ultra-low dark current HgCdTe detector in SWIR for space applications. J. Electron. Mater. 46(10), 6142–6149 (2017)CrossRef
15.
Zurück zum Zitat W.J. Everson, C.K. Ard, J.L. Sepich, B.E. Dean, G.T. Neugebauer, H.F. Schaake, Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy. J. Electron. Mater. 24(5), 505–510 (1995)CrossRef W.J. Everson, C.K. Ard, J.L. Sepich, B.E. Dean, G.T. Neugebauer, H.F. Schaake, Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy. J. Electron. Mater. 24(5), 505–510 (1995)CrossRef
16.
Zurück zum Zitat U. Gilabert, E. Heredia, A.B. Trigubó, ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations. J. Cryst. Growth 295(1), 1–6 (2006)CrossRef U. Gilabert, E. Heredia, A.B. Trigubó, ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations. J. Cryst. Growth 295(1), 1–6 (2006)CrossRef
17.
Zurück zum Zitat M.C. Di Stefano, E. Heredia, U. Gilabert, A.B. Trigubó, Properties of Hg1−xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe. Cryst. Res. Technol. 39(10), 881–885 (2004)CrossRef M.C. Di Stefano, E. Heredia, U. Gilabert, A.B. Trigubó, Properties of Hg1−xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe. Cryst. Res. Technol. 39(10), 881–885 (2004)CrossRef
18.
Zurück zum Zitat X. Gao et al., PVT growth of exfoliated CdZnTe polycrystalline thick films based on stress mismatch mechanism. J. Mater. Sci. Mater. Electron. 28(16), 12253–12258 (2017)CrossRef X. Gao et al., PVT growth of exfoliated CdZnTe polycrystalline thick films based on stress mismatch mechanism. J. Mater. Sci. Mater. Electron. 28(16), 12253–12258 (2017)CrossRef
19.
Zurück zum Zitat S. Schütt, A. Vogt, K. Frei, F. Fischer, M. Fiederle, Investigation of MBE grown polycrystalline CdTe films on the Medipix readout chip. J. Cryst. Growth 468, 230–234 (2017)CrossRef S. Schütt, A. Vogt, K. Frei, F. Fischer, M. Fiederle, Investigation of MBE grown polycrystalline CdTe films on the Medipix readout chip. J. Cryst. Growth 468, 230–234 (2017)CrossRef
20.
Zurück zum Zitat Y. Shen et al., The investigation of Ga-doped ZnO as an interlayer for ohmic contact to Cd1–xZnxTe films. Appl. Surf. Sci. 425, 176–179 (2017)CrossRef Y. Shen et al., The investigation of Ga-doped ZnO as an interlayer for ohmic contact to Cd1–xZnxTe films. Appl. Surf. Sci. 425, 176–179 (2017)CrossRef
21.
Zurück zum Zitat Y.V. Znamenshchykov et al., Electrical, structural and optical properties of Cd1−xZnxTe thick polycrystalline films. Vacuum 149, 270–278 (2018)CrossRef Y.V. Znamenshchykov et al., Electrical, structural and optical properties of Cd1−xZnxTe thick polycrystalline films. Vacuum 149, 270–278 (2018)CrossRef
22.
Zurück zum Zitat T. Alharbi, Energy resolution improvement of CdTe detectors by using the principal component analysis technique. Nucl. Instrum. Methods Phys. Res. Sect. A 882, 114–116 (2018)CrossRef T. Alharbi, Energy resolution improvement of CdTe detectors by using the principal component analysis technique. Nucl. Instrum. Methods Phys. Res. Sect. A 882, 114–116 (2018)CrossRef
23.
Zurück zum Zitat B. Zhou et al., Growth and characterization of detector-grade Cd0.9Zn0.1Te crystals by the traveling heater method with the accelerated crucible rotation technique. J. Electron. Mater. 47(2), 1125–1130 (2018)CrossRef B. Zhou et al., Growth and characterization of detector-grade Cd0.9Zn0.1Te crystals by the traveling heater method with the accelerated crucible rotation technique. J. Electron. Mater. 47(2), 1125–1130 (2018)CrossRef
24.
Zurück zum Zitat S.U. Egarievwe et al., Carbon Coating and defects in CdZnTe and CdMnTe nuclear detectors. IEEE Trans. Nucl. Sci. 63(1), 236–245 (2016)CrossRef S.U. Egarievwe et al., Carbon Coating and defects in CdZnTe and CdMnTe nuclear detectors. IEEE Trans. Nucl. Sci. 63(1), 236–245 (2016)CrossRef
25.
Zurück zum Zitat P. Yu et al., Investigation of effective annealing on CdMnTe:In crystals with different thickness for gamma-ray detectors. J. Cryst. Growth 483, 94–101 (2018)CrossRef P. Yu et al., Investigation of effective annealing on CdMnTe:In crystals with different thickness for gamma-ray detectors. J. Cryst. Growth 483, 94–101 (2018)CrossRef
26.
Zurück zum Zitat N. Jia et al., Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing. J. Cryst. Growth 457, 343–348 (2017)CrossRef N. Jia et al., Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing. J. Cryst. Growth 457, 343–348 (2017)CrossRef
27.
Zurück zum Zitat S. Xi et al., Studies on Cr electrode of CdZnTe detector for high energy radiation detection. J. Mater. Sci. Mater. Electron. 29, 5049–5056 (2018)CrossRef S. Xi et al., Studies on Cr electrode of CdZnTe detector for high energy radiation detection. J. Mater. Sci. Mater. Electron. 29, 5049–5056 (2018)CrossRef
28.
Zurück zum Zitat V.M. Sklyarchuk, V.A. Gnatyuk, W. Pecharapa, Low leakage current Ni/CdZnTe/In diodes for X/γ-ray detectors. Nucl. Instrum. Methods Phys. Res. Sect. A 879, 101–105 (2018)CrossRef V.M. Sklyarchuk, V.A. Gnatyuk, W. Pecharapa, Low leakage current Ni/CdZnTe/In diodes for X/γ-ray detectors. Nucl. Instrum. Methods Phys. Res. Sect. A 879, 101–105 (2018)CrossRef
29.
Zurück zum Zitat U.N. Roy et al., Assessment of a new ZnO:Al contact to CdZnTe for X- and gamma-ray detector applications. AIP Adv. 7(9), 095216 (2017)CrossRef U.N. Roy et al., Assessment of a new ZnO:Al contact to CdZnTe for X- and gamma-ray detector applications. AIP Adv. 7(9), 095216 (2017)CrossRef
30.
Zurück zum Zitat U.N. Roy et al., Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors. Sci. Rep. 6, 26384 (2016)CrossRef U.N. Roy et al., Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors. Sci. Rep. 6, 26384 (2016)CrossRef
31.
Zurück zum Zitat K. Tang et al., Cd1−xZnxTe photodetectors with transparent conductive ZnO contacts. Appl. Surf. Sci. 433, 177–180 (2018)CrossRef K. Tang et al., Cd1−xZnxTe photodetectors with transparent conductive ZnO contacts. Appl. Surf. Sci. 433, 177–180 (2018)CrossRef
32.
Zurück zum Zitat J. Zázvorka, J. Franc, L. Beran, P. Moravec, J. Pekárek, M. Veis, Dynamics of native oxide growth on CdTe and CdZnTe X-ray and gamma-ray detectors. Sci. Technol. Adv. Mater. 17(1), 792–798 (2016)CrossRef J. Zázvorka, J. Franc, L. Beran, P. Moravec, J. Pekárek, M. Veis, Dynamics of native oxide growth on CdTe and CdZnTe X-ray and gamma-ray detectors. Sci. Technol. Adv. Mater. 17(1), 792–798 (2016)CrossRef
33.
Zurück zum Zitat J. Zázvorka et al., Optical and electrical study of CdZnTe surfaces passivated by KOH and NH4F solutions. Appl. Surf. Sci. 389, 1214–1219 (2016)CrossRef J. Zázvorka et al., Optical and electrical study of CdZnTe surfaces passivated by KOH and NH4F solutions. Appl. Surf. Sci. 389, 1214–1219 (2016)CrossRef
34.
Zurück zum Zitat J. Pekarek, E. Belas, J. Zazvorka, Long-term stable surface treatments on CdTe and CdZnTe radiation detectors. J. Electron. Mater. 46(4), 1996–2002 (2017)CrossRef J. Pekarek, E. Belas, J. Zazvorka, Long-term stable surface treatments on CdTe and CdZnTe radiation detectors. J. Electron. Mater. 46(4), 1996–2002 (2017)CrossRef
35.
Zurück zum Zitat X. Fu et al., Indentation-introduced dislocation rosettes and their effects on the carrier transport properties of CdZnTe crystal. CrystEngComm 18(30), 5667–5673 (2016)CrossRef X. Fu et al., Indentation-introduced dislocation rosettes and their effects on the carrier transport properties of CdZnTe crystal. CrystEngComm 18(30), 5667–5673 (2016)CrossRef
36.
Zurück zum Zitat Z. Zhang, H. Gao, W. Jie, D. Guo, R. Kang, Y. Li, Chemical mechanical polishing and nanomechanics of semiconductor CdZnTe single crystals. Semicond. Sci. Technol. 23(10), 105023 (2008)CrossRef Z. Zhang, H. Gao, W. Jie, D. Guo, R. Kang, Y. Li, Chemical mechanical polishing and nanomechanics of semiconductor CdZnTe single crystals. Semicond. Sci. Technol. 23(10), 105023 (2008)CrossRef
37.
Zurück zum Zitat C. Xiao, J. Guo, P. Zhang, C. Chen, L. Chen, L. Qian, Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon. Sci. Rep. 7, 40750 (2017)CrossRef C. Xiao, J. Guo, P. Zhang, C. Chen, L. Chen, L. Qian, Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon. Sci. Rep. 7, 40750 (2017)CrossRef
38.
Zurück zum Zitat Z. Zhang, B. Wang, P. Zhou, R. Kang, B. Zhang, D. Guo, A novel approach of chemical mechanical polishing for cadmium zinc telluride wafers. Sci. Rep. 6:26891-1–26891-7, 2016 Z. Zhang, B. Wang, P. Zhou, R. Kang, B. Zhang, D. Guo, A novel approach of chemical mechanical polishing for cadmium zinc telluride wafers. Sci. Rep. 6:26891-1–26891-7, 2016
39.
Zurück zum Zitat R. Singh et al., Molecular beam epitaxy growth of high-quality HgCdTe LWIR layers on polished and repolished CdZnTe substrates. J. Electron. Mater. 34(6), 885–890 (2005)CrossRef R. Singh et al., Molecular beam epitaxy growth of high-quality HgCdTe LWIR layers on polished and repolished CdZnTe substrates. J. Electron. Mater. 34(6), 885–890 (2005)CrossRef
40.
Zurück zum Zitat P. Moravec et al., Chemical polishing of CdZnTe substrates fabricated from crystals grown by the vertical-gradient freezing method. J. Electron. Mater. 35(6), 1206–1213 (2006)CrossRef P. Moravec et al., Chemical polishing of CdZnTe substrates fabricated from crystals grown by the vertical-gradient freezing method. J. Electron. Mater. 35(6), 1206–1213 (2006)CrossRef
41.
Zurück zum Zitat Z. Zhang, Y. Meng, D. Guo, R. Kang, H. Gao, Nanoscale machinability and subsurface damage machined by CMP of soft-brittle CdZnTe crystals. Int. J. Adv. Manuf. Technol. 47(9–12), 1105–1112 (2010)CrossRef Z. Zhang, Y. Meng, D. Guo, R. Kang, H. Gao, Nanoscale machinability and subsurface damage machined by CMP of soft-brittle CdZnTe crystals. Int. J. Adv. Manuf. Technol. 47(9–12), 1105–1112 (2010)CrossRef
42.
Zurück zum Zitat A. Nouruzi-Khorasani, M.A. Lunn, I.P. Jones, P.S. Dobson, D.J. Williams, M.G. Astles, Surface damage of CdTe by mechanical polishing investigated by cross-sectional TEM. J. Cryst. Growth 102(4), 1069–1073 (1990)CrossRef A. Nouruzi-Khorasani, M.A. Lunn, I.P. Jones, P.S. Dobson, D.J. Williams, M.G. Astles, Surface damage of CdTe by mechanical polishing investigated by cross-sectional TEM. J. Cryst. Growth 102(4), 1069–1073 (1990)CrossRef
43.
Zurück zum Zitat I. Hähnert, M. Wienecke, Relation between dislocation density, bulk electrical properties and ohmic contacts of CdTe. Mater. Sci. Eng. B 16(1–3), 168–171 (1993)CrossRef I. Hähnert, M. Wienecke, Relation between dislocation density, bulk electrical properties and ohmic contacts of CdTe. Mater. Sci. Eng. B 16(1–3), 168–171 (1993)CrossRef
44.
Zurück zum Zitat D.F. Weirauch, A study of lapping and polishing damage in single-crystal CdTe. J. Electrochem. Soc. 132(1), 250–254 (1985)CrossRef D.F. Weirauch, A study of lapping and polishing damage in single-crystal CdTe. J. Electrochem. Soc. 132(1), 250–254 (1985)CrossRef
45.
Zurück zum Zitat A. Hossain, A.E. Bolotnikov, G.S. Camarda, Y. Cui, G. Yang, R.B. James, Defects in cadmium zinc telluride crystals revealed by etch-pit distributions. J. Cryst. Growth 310(21), 4493–4498 (2008)CrossRef A. Hossain, A.E. Bolotnikov, G.S. Camarda, Y. Cui, G. Yang, R.B. James, Defects in cadmium zinc telluride crystals revealed by etch-pit distributions. J. Cryst. Growth 310(21), 4493–4498 (2008)CrossRef
46.
Zurück zum Zitat M. Shen et al., Investigation on the surface treatments of CdMnTe single crystals. Mater. Sci. Semicond. Process. 31, 536–542 (2015)CrossRef M. Shen et al., Investigation on the surface treatments of CdMnTe single crystals. Mater. Sci. Semicond. Process. 31, 536–542 (2015)CrossRef
47.
Zurück zum Zitat E. Saucedo, P. Rudolph, E. Dieguez, Modified Bridgman growth of CdTe crystals. J. Cryst. Growth 310(7–9), 2067–2071 (2008)CrossRef E. Saucedo, P. Rudolph, E. Dieguez, Modified Bridgman growth of CdTe crystals. J. Cryst. Growth 310(7–9), 2067–2071 (2008)CrossRef
48.
Zurück zum Zitat J. Zhang, W. Jie, L. Luan, T. Wang, D. Zeng, Evaluation of Mn uniformity in CdMnTe crystal grown by the vertical Bridgman method. J. Electron. Mater. 37(8), 1158–1162 (2008)CrossRef J. Zhang, W. Jie, L. Luan, T. Wang, D. Zeng, Evaluation of Mn uniformity in CdMnTe crystal grown by the vertical Bridgman method. J. Electron. Mater. 37(8), 1158–1162 (2008)CrossRef
49.
Zurück zum Zitat Y. Xu, N. Jia, Y. He, R. Guo, Y. Gu, W. Jie, Interplay mechanism between secondary phase particles and extended dislocations in CdZnTe crystals. CrystEngComm 17(45), 8639–8644 (2015)CrossRef Y. Xu, N. Jia, Y. He, R. Guo, Y. Gu, W. Jie, Interplay mechanism between secondary phase particles and extended dislocations in CdZnTe crystals. CrystEngComm 17(45), 8639–8644 (2015)CrossRef
50.
Zurück zum Zitat C. Buis, G. Marrakchi, T.A. Lafford, A. Brambilla, L. Verger, E. Gros, D’Aillon, Effects of dislocation walls on image quality when using cadmium telluride X-ray detectors. IEEE Trans. Nucl. Sci. 60(1), 199–203 (2013)CrossRef C. Buis, G. Marrakchi, T.A. Lafford, A. Brambilla, L. Verger, E. Gros, D’Aillon, Effects of dislocation walls on image quality when using cadmium telluride X-ray detectors. IEEE Trans. Nucl. Sci. 60(1), 199–203 (2013)CrossRef
51.
Zurück zum Zitat H. Shiraki, M. Funaki, Y. Ando, A. Tachibana, S. Kominami, R. Ohno, THM growth and characterization of 100 mm diameter CdTe single crystals. IEEE Trans. Nucl. Sci. 56(4), 1717–1723 (2009)CrossRef H. Shiraki, M. Funaki, Y. Ando, A. Tachibana, S. Kominami, R. Ohno, THM growth and characterization of 100 mm diameter CdTe single crystals. IEEE Trans. Nucl. Sci. 56(4), 1717–1723 (2009)CrossRef
52.
Zurück zum Zitat D. Nečas, P. Klapetek, Gwyddion: an open-source software for SPM data analysis. Cent. Eur. J. Phys. 10(1), 181–188 (2012) D. Nečas, P. Klapetek, Gwyddion: an open-source software for SPM data analysis. Cent. Eur. J. Phys. 10(1), 181–188 (2012)
53.
Zurück zum Zitat K. Nakagawa, K. Maeda, S. Takeuchi, Observation of dislocations in cadmium telluride by cathodoluminescence microscopy. Appl. Phys. Lett. 34(9), 574–575 (1979)CrossRef K. Nakagawa, K. Maeda, S. Takeuchi, Observation of dislocations in cadmium telluride by cathodoluminescence microscopy. Appl. Phys. Lett. 34(9), 574–575 (1979)CrossRef
54.
Zurück zum Zitat R. Triboulet, P. Siffert, CdTe and Related Compounds: Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications (Elsevier, Amsterdam, 2010) R. Triboulet, P. Siffert, CdTe and Related Compounds: Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications (Elsevier, Amsterdam, 2010)
55.
Zurück zum Zitat X. Fu, Y. Xu, L. Xu, Y. Gu, N. Jia, W. Jie, Study on the local stress induced dislocations on (\(\bar {1}\bar {1}\bar {1}\)) Te face of CdTe-based crystals. J. Cryst. Growth 478, 71–76 (2017)CrossRef X. Fu, Y. Xu, L. Xu, Y. Gu, N. Jia, W. Jie, Study on the local stress induced dislocations on (\(\bar {1}\bar {1}\bar {1}\)) Te face of CdTe-based crystals. J. Cryst. Growth 478, 71–76 (2017)CrossRef
56.
Zurück zum Zitat I. Hähnert, M. Schenk, New defect etchants for CdTe and Hg1−xCdxTe. J. Cryst. Growth 101(1–4), 251–255 (1990)CrossRef I. Hähnert, M. Schenk, New defect etchants for CdTe and Hg1−xCdxTe. J. Cryst. Growth 101(1–4), 251–255 (1990)CrossRef
57.
Zurück zum Zitat P. Capper, Properties of Narrow-Gap Cadmium-Based Compounds (IEE INSPEC, London, 1995) P. Capper, Properties of Narrow-Gap Cadmium-Based Compounds (IEE INSPEC, London, 1995)
58.
Zurück zum Zitat C.C.R. Watson, K. Durose, A.J. Banister, E. O’Keefe, S.K. Bains, Qualification of a new defect revealing etch for CdTe using cathodoluminescence microscopy. Mater. Sci. Eng. B 16(1–3), 113–117 (1993)CrossRef C.C.R. Watson, K. Durose, A.J. Banister, E. O’Keefe, S.K. Bains, Qualification of a new defect revealing etch for CdTe using cathodoluminescence microscopy. Mater. Sci. Eng. B 16(1–3), 113–117 (1993)CrossRef
59.
Zurück zum Zitat U.N. Roy et al., Growth and characterization of CdMnTe by the vertical Bridgman technique. J. Cryst. Growth 437, 53–58 (2016)CrossRef U.N. Roy et al., Growth and characterization of CdMnTe by the vertical Bridgman technique. J. Cryst. Growth 437, 53–58 (2016)CrossRef
60.
Zurück zum Zitat S. Uba, S. Babalola, A. Hossain, R. James, Characterization of extended defects observed in cadmium zinc telluride (CZT) crystal. MRS Proceedings, vol. 1792 (2015), p. mrss15-2134263, S. Uba, S. Babalola, A. Hossain, R. James, Characterization of extended defects observed in cadmium zinc telluride (CZT) crystal. MRS Proceedings, vol. 1792 (2015), p. mrss15-2134263,
61.
Zurück zum Zitat A. Hossain et al., Vanadium-doped cadmium manganese telluride (Cd1−xMnxTe) crystals as X- and gamma-ray detectors. J. Electron. Mater. 38(8), 1593–1599 (2009)CrossRef A. Hossain et al., Vanadium-doped cadmium manganese telluride (Cd1−xMnxTe) crystals as X- and gamma-ray detectors. J. Electron. Mater. 38(8), 1593–1599 (2009)CrossRef
62.
Zurück zum Zitat M. Inoue, I. Teramoto, S. Takayanagi, Etch pits and polarity in CdTe crystals. J. Appl. Phys. 33(8), 2578–2582 (1962)CrossRef M. Inoue, I. Teramoto, S. Takayanagi, Etch pits and polarity in CdTe crystals. J. Appl. Phys. 33(8), 2578–2582 (1962)CrossRef
63.
Zurück zum Zitat M. Inoue, I. Teramoto, S. Takayanagi, Cd and Te dislocations in CdTe. J. Appl. Phys. 34(2), 404–405 (1963)CrossRef M. Inoue, I. Teramoto, S. Takayanagi, Cd and Te dislocations in CdTe. J. Appl. Phys. 34(2), 404–405 (1963)CrossRef
64.
Zurück zum Zitat Y.-C. Lu. R.K. Route, D. Elwell, R.S. Feigelson, Etch pit studies in CdTe crystals. J. Vac. Sci. Technol. A 3(1), 264–270 (1985)CrossRef Y.-C. Lu. R.K. Route, D. Elwell, R.S. Feigelson, Etch pit studies in CdTe crystals. J. Vac. Sci. Technol. A 3(1), 264–270 (1985)CrossRef
65.
Zurück zum Zitat P. Yu, W. Jie, T. Wang, Improvement of the quality of indium-doped CdZnTe single crystals by post-growth annealing for radiation detectors. CrystEngComm 13(10), 3521–3525 (2011)CrossRef P. Yu, W. Jie, T. Wang, Improvement of the quality of indium-doped CdZnTe single crystals by post-growth annealing for radiation detectors. CrystEngComm 13(10), 3521–3525 (2011)CrossRef
66.
Zurück zum Zitat K. Chattopadhyay et al., Surface passivation of cadmium zinc telluride radiation detectors by potassium hydroxide solution. J. Electron. Mater. 29(6), 708–712 (2000)CrossRef K. Chattopadhyay et al., Surface passivation of cadmium zinc telluride radiation detectors by potassium hydroxide solution. J. Electron. Mater. 29(6), 708–712 (2000)CrossRef
67.
Zurück zum Zitat F.F. Sheng, X.P. Cui, S.W. Sun, J.R. Yang, Etch pits of precipitates in CdZnTe crystals on (1 1 1) B surface. J. Cryst. Growth 354(1), 76–80 (2012)CrossRef F.F. Sheng, X.P. Cui, S.W. Sun, J.R. Yang, Etch pits of precipitates in CdZnTe crystals on (1 1 1) B surface. J. Cryst. Growth 354(1), 76–80 (2012)CrossRef
68.
Zurück zum Zitat U.N. Roy et al., Evaluation of CdTexSe1−x crystals grown from a Te-rich solution. J. Cryst. Growth 389, 99–102 (2014)CrossRef U.N. Roy et al., Evaluation of CdTexSe1−x crystals grown from a Te-rich solution. J. Cryst. Growth 389, 99–102 (2014)CrossRef
69.
Zurück zum Zitat V.N. Babentsov, Dislocation emission caused by different types of nanoscale deformation defects in CdTe. Semicond. Phys. Quantum Electron. Optoelectron. 17(1), 29–33 (2014)CrossRef V.N. Babentsov, Dislocation emission caused by different types of nanoscale deformation defects in CdTe. Semicond. Phys. Quantum Electron. Optoelectron. 17(1), 29–33 (2014)CrossRef
70.
Zurück zum Zitat K. Olender, T. Wosinski, A. Makosa, S. Kret, V. Kolkovsky, G. Karczewski, Capture kinetics at deep-level defects in MBE-grown CdTe layers. Semicond. Sci. Technol. 26(4), 45008 (2011)CrossRef K. Olender, T. Wosinski, A. Makosa, S. Kret, V. Kolkovsky, G. Karczewski, Capture kinetics at deep-level defects in MBE-grown CdTe layers. Semicond. Sci. Technol. 26(4), 45008 (2011)CrossRef
71.
Zurück zum Zitat K. Yasuda et al., Characterization of (211) and (100) CdTe layers grown on Si substrates by metalorganic vapor-phase epitaxy. J. Electron. Mater. 46(11), 6704–6708 (2017)CrossRef K. Yasuda et al., Characterization of (211) and (100) CdTe layers grown on Si substrates by metalorganic vapor-phase epitaxy. J. Electron. Mater. 46(11), 6704–6708 (2017)CrossRef
Metadaten
Titel
Determining the sub-surface damage of CdTe single crystals after lapping
verfasst von
O. Šik
L. Škvarenina
O. Caha
P. Moravec
P. Škarvada
E. Belas
L. Grmela
Publikationsdatum
29.03.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 11/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9002-7

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