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Erschienen in:
2007 | OriginalPaper | Buchkapitel
Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation
verfasst von : Muhammad Nawaz, Stefan Decker, Luis-Felipe Giles, Wolfgang Molzer, Thomas Schulz, Klaus Schrüfer, Reinhard Mahnkopf
Erschienen in: Simulation of Semiconductor Processes and Devices 2007
Verlag: Springer Vienna
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Full 3D numerical process and device simulations have been performed in order to optimize device design of multigate FETs (MuGFETs) and the underlying fabrication processes. At first process simulation parameters have been calibrated to measurement data of pre-development process results. Based on this, device electrical performance has been assessed for different gate length, fin doping, implant conditions, fin height, fin width, gate oxide and box thickness by means of typical device parameters.