Anzeige
Erschienen in:
2001 | OriginalPaper | Buchkapitel
Device Simulation and Measurement of Hybrid SBTT
verfasst von : K. Matsuzawa, K. Uchida, A. Nishiyama, T. Numata, M. Noguchi
Erschienen in: Simulation of Semiconductor Processes and Devices 2001
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
A hybrid Schottky barrier tunneling transistor is assessed by device simulations and measurements. n+ regions are formed in Schottky contact regions of source and drain. The unified simulation technique is used to simulate ohmic and Schottky contact natures. The devices are fabricated by utilizing the conventional extension process. It is shown that potential modulation by n+ regions reduces drain leakage current and enhance the tunneling probability at the source contract.