1988 | OriginalPaper | Buchkapitel
Device Simulation
verfasst von : Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
Erschienen in: Computer-Aided Design and VLSI Device Development
Verlag: Springer US
Enthalten in: Professional Book Archive
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
As the dimensions of MOS devices are scaled down, the device structures become more complicated. The insulator/semiconductor interfaces are often non-planar, and the impurity profiles of the devices are complicated and may not be expressed accurately in Gaussian form. The increased complexity of the device structure is necessary for optimization of the device performance, such as minimizing the drain-induced barrier-lowering effects, or enhancing the device reliability, e.g., reducing the electric field at the drain of the MOSFET. Therefore, in the development of VLSI MOS technology, it is essential to be able to simulate the electrical characteristics of devices which have complicated structures. The GEMINI program provides this capability.