2016 | OriginalPaper | Buchkapitel
Diffusion in Nonmetals
verfasst von : Paul Shewmon
Erschienen in: Diffusion in Solids
Verlag: Springer International Publishing
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In the preceding chapters, the specific examples used concerned metals. This stems partly from the author’s experience but also from the fact that the majority of the research on diffusion in solids has been done with metals. There is reason to believe that all the general theory and most of the physical phenomena discussed in the earlier chapters applies equally well to nonmetals, although well-studied examples are often not available. With the change in electronic structure in going from metals to nonmetals, several new effects arise. In insulators the electrons are bound so tightly to the atoms that the principal means of carrying electric current at elevated temperature is by the movement of ions. In oxides and sulfides of transition metals the charge is carried by electrons, or electron holes, but charge conservation dictates that deviations from stoichiometry are accompanied by large increases in the concentration of the point defects that aid diffusion. In elemental semiconductors like silicon and germanium the bonding leads to both special electronic effects and the relatively easy accommodation of host and solute atoms on interstitial sites. This chapter deals with the phenomena which are unique to nonmetals, and ordered alloys.