nach oben

Journal of Computational Electronics

Erschienen in:

13.03.2023

Digital-to-analog converter implementation based on silicon nanowire FET

verfasst von: Ashkan Horri

Erschienen in: Journal of Computational Electronics | Ausgabe 3/2023

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config

KI-gestützte Suche

Aus

Abstract

In this paper, a silicon nanowire (SiNW) FET-based DAC is proposed and simulated. The proposed DAC is based on SiNW unit element current cells and logic thermometric decoding block. The FET current is calculated by using non-equilibrium Green’s function (NEGF) formalism. The unit current cell geometry and bias condition were chosen to maximize \(I_{\text {ON}}/I_{\text {OFF}}\) ratio and to minimize differential nonlinearity (DNL) and integral nonlinearity (INL) errors. The simulation results indicate a DNL of [\(-\)0.19,0.17]LSB and an INL of [\(-\)0.61,0.335]LSB errors that meet the requirement for 5-bit resolution at 0.4 V operating voltage. Also, the low DAC active area of 351 nm² was obtained that is suitable for very large-scale integration (VLSI) circuits.

Nächster Artikel A performance evaluation of a novel field-effect device as an alternative to the field-effect diode

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 340 Zeitschriften

aus folgenden Fachgebieten:

Bauwesen + Immobilien
Business IT + Informatik
Finance + Banking
Management + Führung
Marketing + Vertrieb
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Cong, Y., Geiger, R.L.: Switching sequence optimization for gradient error compensation in thermometer-decoded DAC arrays. IEEE Trans. Circuits Syst. II: Analog Digit. Signal Process. 47(7), 585–595 (2000)

Lin, Y.H., Lee, D.H., Yang, C.C., et al.: High-speed DACs with random multiple data-weighted averaging algorithm. In: Proceedings of the 2003 International Symposium on Circuits and Systems, p. 1, (2003)

Bramburger, S., Pitonak, P., Killat, D.: A unary coded current steering DAC with sequential stepping of the thermometer coded register in 1 and 2 LSB steps. In: 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), pp. 0089–0092, (2018)

Lin, C.H., Van Der Goes, F.M., Westra, J.R., et al.: A 12 bit 2.9 GS/s DAC with IM3<< -60 dBc beyond 1 GHz in 65 nm CMOS. IEEE J Solid-State Circuits 44(12), 3285–3293 (2009)CrossRef

Lin, W.T., Huang, H.Y., Kuo, T.H.: A 12-bit 40 nm DAC achieving SFDR> 70 dB at 1.6 GS/s and IMD -61dB at 2.8 GS/s with DEMDRZ tech- nique. IEEE J Solid-State Circuits 49(3), 708–717 (2014)CrossRef

Park, S., Kim, G., Park, S.C., et al.: A digital-to-analog converter basedon differential-quad switching. IEEE J Solid-State Circuits 37(10), 1335–1338 (2002)CrossRef

Spiridon, S., Tang, J., Yan, H., et al.: A 375 mW multimode DAC-basedtransmitter with 2.2 GHz signal bandwidth and in-band IM3< -58 dBc in 40 nm CMOS. IEEE J Solid State Circuits 48(7), 1595–1604 (2013)CrossRef

Razavi, B.: The current-steering DAC. IEEE Solid-State Circuits Mag. 31(1), 11–15 (2018)MathSciNetCrossRef

Clark, L. T., Vashishtha, V., Harris, D. M., Dietrich, S., Wang, z.: Design flows and collateral for the ASAP7 7 nm FinFET predictive process design kit. In: Proceedings IEEE Interanational Conference on Microelectronics System Education, pp. 1–4, (2017)

10.

Dumitru, F.S., Cucu-Laurenciu, N., Matei, A., Enachescu, M.: Graphene nanoribbons based 5-bit digital-to-analog converter. IEEE Trans. Nanotechnol. 20, 248–254 (2021)CrossRef

11.

Shu-Chung, Yi.: A 6-bit digital to analogue converter based on current mirrors. Int. J. Electron. 99(9), 1291–1298 (2012)CrossRef

12.

Liao, Yi.-Bo., Chiang, Meng-Hsueh., Kim, Keunwoo, Hsu, Wei-Chou.: Assessment of structure variation in silicon nanowire FETs and impact on SRAM. Microelectron. J. 43(5), 300–304 (2012)CrossRef

13.

Nayak, K., et al.: CMOS logic device and circuit performance of Si gate all around nanowire MOSFET. IEEE Trans. Electron Devices 61(9), 3066–3074 (2014)CrossRef

14.

Deveugele, J., Steyaert, M.S.J.: A 10-bit 250-MS/s binary-weighted current-steering DAC. IEEE J. Solid-State Circuits 41(2), 320–329 (2006)CrossRef

15.

Lee, C.W., Yun, S.-R.-N., Yu, C.-G., Park, J.-T.: Device design guidelines for nano-scale MuGFETs. Solid-State Electron 51(3), 505–510 (2007)CrossRef

16.

Razavieh, A., Mohseni, P. K., Jung, K., Mehrotra, S., Das, S., Suslov, S., Li, Xi., Klimeck, G., Janes, David B., Appenzeller, J.: Effect of diameter variation on electrical characteristics of schottky barrier indium arsenide nanowire field-effect transistors. ACS Nano 8(6), 6281–6287 (2014)CrossRef

17.

Soler, J.M., et al.: The SIESTA method for ab initio order-N materials simulation. J. Phys. Condens. Matter 14(11), 2745 (2002)CrossRef

18.

Perdew, J.P., Burke, K., Ernzerhof, M.: Generalized gradient approximation made simple. Phys. Rev. Lett. 77(18), 3865 (1996)CrossRef

19.

Troullier, N., Martins, J.L.: Efficient pseudopotentials for plane-wave calculations. Phys. Rev. B 43(3), 1993 (1991)CrossRef

20.

Brandbyge, M., Mozos, J.-L., Ordejón, P., Taylor, J., Stokbro, K.: Density-functional method for nonequilibrium electron transport. Phys. Rev. B 65(16), 165401 (2002)CrossRef

21.

Datta, S.: Quantum transport: Atom to transistor (Cambridge University Press), (2005)

22.

Anantram, M.P., Lundstrom, M.S., Nikonov, D.E.: Modeling of nanoscale devices. Proc. IEEE 96(9), 1511–1550 (2008)CrossRef

23.

Sun, Y., Yu, H. Y., Singh, N., Leong, K. C., Quek, E.,Lo, G. Q., Kwong, D. L.: Demonstration of memory string with stacked junction-less SONOS realized on vertical silicon nanowire. In: 2011 International Electron Devices Meeting, pp. 9-7. IEEE, (2011)

24.

Yu, H. Y., Sun, Y., Singh, N., Lo, G..Q., Kwong, D..L.: Perspective of flash memory realized on vertical Si nanowires. Microelectron. Reliab. 52(4), 651–66 (2012)CrossRef

Titel: Digital-to-analog converter implementation based on silicon nanowire FET
verfasst von: Ashkan Horri
Publikationsdatum: 13.03.2023
Verlag: Springer US
Erschienen in: Journal of Computational Electronics / Ausgabe 3/2023
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-023-02025-9

Springer Professional

Digital-to-analog converter implementation based on silicon nanowire FET

Abstract

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

Weitere Artikel der Ausgabe 3/2023

Ultrahigh FOM and multiple Fano resonances in MIM waveguide systems with half-ring and rectangular cavities

Ternary RCS reduction metasurface based on a parallel resonance circuit

Computational optimization and optical analysis of thin-film organic solar cells for high efficiency

Role of end-capped acceptor moieties on optoelectronic properties of small molecules featuring B–N covalent bond-based organic solar cells

Investigating the photovoltaic performance for Si-doped zigzag graphene nanoribbons using a DFT framework

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

Springer Professional

Abstract

Bitte loggen Sie sich ein, um Zugang zu Ihrer Lizenz zu erhalten.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

Ultrahigh FOM and multiple Fano resonances in MIM waveguide systems with half-ring and rectangular cavities

Ternary RCS reduction metasurface based on a parallel resonance circuit

Computational optimization and optical analysis of thin-film organic solar cells for high efficiency

Role of end-capped acceptor moieties on optoelectronic properties of small molecules featuring B–N covalent bond-based organic solar cells

Investigating the photovoltaic performance for Si-doped zigzag graphene nanoribbons using a DFT framework

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications