Skip to main content

1988 | OriginalPaper | Buchkapitel

Diode Models

verfasst von : Dileep Divekar

Erschienen in: FET Modeling for Circuit Simulation

Verlag: Springer US

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Although diode is not a field effect device, it is part of the parasitics associated with the field effect devices. Field effect devices have junction diodes which are not part of the intrinsic device but are part of the parasitic components which need to be included in the model. This chapter describes the diode model suitable fo this purpose. This model is simpler than the model implemented as a general diode model in many of the circuit simulation programs. The general diode model includes parasitic series resistance effects and reverse bias breakdown effects which are not modeled for the parasitic diodes. For normal device operation, the parasitic diodes are supposed to be reverse biased and their contribution to the device characteristics is normally negligible. Hence there is no need to use a complicated model.

Metadaten
Titel
Diode Models
verfasst von
Dileep Divekar
Copyright-Jahr
1988
Verlag
Springer US
DOI
https://doi.org/10.1007/978-1-4613-1687-9_3

Neuer Inhalt