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Erschienen in:
2007 | OriginalPaper | Buchkapitel
Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation
verfasst von : Yingda Cheng, Irene M. Gamba, Armando Majorana, Chi-Wang Shu
Erschienen in: Simulation of Semiconductor Processes and Devices 2007
Verlag: Springer Vienna
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We present preliminary results of a discontinuous Galerkin scheme applied to deterministic computations of the transients for the Boltzmann-Poisson system describing electron transport in semiconductor devices. The collisional term models optical-phonon interactions which become dominant under strong energetic conditions corresponding to nanoscale active regions under applied bias. The proposed numerical technique, that is a finite element method which uses discontinuous piecewise polynomials as basis functions, is applied for investigating the carrier transport in bulk silicon and in a silicon
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diode. Additionally, the obtained results are compared to those of a high order WENO scheme solver.