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Erschienen in: Journal of Materials Science 17/2017

23.05.2017 | Ceramics

Doping mechanisms and electrical properties of bismuth tantalate fluorites

verfasst von: K. Firman, K. B. Tan, C. C. Khaw, Z. Zainal, Y. P. Tan, S. K. Chen

Erschienen in: Journal of Materials Science | Ausgabe 17/2017

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Abstract

Phase-pure bismuth tantalate fluorites were successfully prepared via conventional solid-state method at 900 °C in 24–48 h. The subsolidus solution was proposed with the general formula of Bi3+x Ta1−x O7−x (0 ≤ x ≤ 0.184), wherein the formation mechanism involved a one-to-one replacement of Ta5+ cation by Bi3+ cation within ~4.6 mol% difference. These samples crystallised in a cubic symmetry, space group Fm-3 m with lattice constants, a = b = c in the range 5.4477(± 0.0037)–5.4580(± 0.0039) Å. A slight increment in the unit cell was discernible with increasing Bi2O3 content, and this may attribute to the incorporation of relatively larger Bi3+ cation in the host structure. The linear correlation between lattice parameter and composition variable showed that the Vegard’s law was obeyed. Both TGA and DTA analyses showed Bi3+x Ta1−x O7−x samples to be thermally stable as neither phase transition nor weight loss was observed within ~28–1000 °C. The AC impedance study of Bi3TaO7 samples was performed over the frequency range 5–13 MHz. At intermediate temperatures, ~350–850 °C, Bi3+x Ta1−x O7−x solid solution was a modest oxide ion conductor with conductivity, ~10−6–10−3 S cm−1; the activation energy was in the range 0.98–1.08 eV.

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Metadaten
Titel
Doping mechanisms and electrical properties of bismuth tantalate fluorites
verfasst von
K. Firman
K. B. Tan
C. C. Khaw
Z. Zainal
Y. P. Tan
S. K. Chen
Publikationsdatum
23.05.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 17/2017
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-017-1216-1

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