Skip to main content

2016 | OriginalPaper | Buchkapitel

3. Dynamic Response of Multiple Interconnected Memristors

verfasst von : Ioannis Vourkas, Georgios Ch. Sirakoulis

Erschienen in: Memristor-Based Nanoelectronic Computing Circuits and Architectures

Verlag: Springer International Publishing

Aktivieren Sie unsere intelligente Suche um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

This chapter focuses on the architectural perspectives that arise in circuits with multiple interconnected memristors, which demonstrate threshold-dependent switching behavior. We investigate the dynamic switching response and analyze the characteristics of both regular and irregular serial/parallel memristive circuit compositions; i.e. memristive combinations which are structured using either repetitive or non-repetitive interconnection patterns. We show how composite memristive systems can be efficiently built out of individual memristors, presenting different electrical characteristics from their structural elements. Following the proposed generalized synthesis concept, by appropriately selecting and interconnecting the constitutive circuit components, we construct composite memristive systems which exhibit behavior of programmable multi-state conducting elements. We provide several examples of such memristive implementations, combining different polarities and different initial states and/or switching characteristics, thus causing highly nontrivial, composite responses to the applied voltages. Finally, we present a novel approach for the construction of robust fine-resolution pro-grammable memristive switches.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literatur
1.
Zurück zum Zitat Y.V. Pershin, M. Di Ventra, Memory effects in complex materials and nanoscale systems. Adv. Phys. 60(2), 145–227 (2011)CrossRef Y.V. Pershin, M. Di Ventra, Memory effects in complex materials and nanoscale systems. Adv. Phys. 60(2), 145–227 (2011)CrossRef
2.
Zurück zum Zitat L.O. Chua, Resistance switching memories are memristors. Appl. Phys. A Mater. Sci. Process. 102(4), 765–783 (2011)CrossRefMATH L.O. Chua, Resistance switching memories are memristors. Appl. Phys. A Mater. Sci. Process. 102(4), 765–783 (2011)CrossRefMATH
3.
Zurück zum Zitat S. Hamdioui, H. Aziza, G.C. Sirakoulis, Memristor based memories: technology, design and test, in 9th IEEE International Conference on Design and Technology of Integrated System in Nanoscale Era (DTIS), Santorini island, Greece (2014) S. Hamdioui, H. Aziza, G.C. Sirakoulis, Memristor based memories: technology, design and test, in 9th IEEE International Conference on Design and Technology of Integrated System in Nanoscale Era (DTIS), Santorini island, Greece (2014)
4.
Zurück zum Zitat Y. Pershin, M. Di Ventra, Practical approach to programmable analog circuits with memristors. IEEE Trans. Circ. Syst. I Reg. Papers 57(8), 1857–1864 (2010)MathSciNetCrossRef Y. Pershin, M. Di Ventra, Practical approach to programmable analog circuits with memristors. IEEE Trans. Circ. Syst. I Reg. Papers 57(8), 1857–1864 (2010)MathSciNetCrossRef
5.
Zurück zum Zitat M. Gholipour, N. Masoumi, Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures. Microelectron. J. 44(3), 190–200 (2013)CrossRef M. Gholipour, N. Masoumi, Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures. Microelectron. J. 44(3), 190–200 (2013)CrossRef
6.
Zurück zum Zitat K.H. Kim, S. Gaba, D. Wheeler, J.M. Cruz-Albrecht, T. Hussain, N. Srinivasa, W. Lu, A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications. Nano Lett. 12(1), 389–395 (2012)CrossRef K.H. Kim, S. Gaba, D. Wheeler, J.M. Cruz-Albrecht, T. Hussain, N. Srinivasa, W. Lu, A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications. Nano Lett. 12(1), 389–395 (2012)CrossRef
7.
Zurück zum Zitat E. Lehtonen, M. Laiho, Stateful implication logic with memristors, in IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), San Francisco, CA (2009) E. Lehtonen, M. Laiho, Stateful implication logic with memristors, in IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), San Francisco, CA (2009)
8.
Zurück zum Zitat Y.V. Pershin, M. Di Ventra, Solving mazes with memristors: a massively parallel approach. Phys. Rev. E 84, 046703 (2011)CrossRef Y.V. Pershin, M. Di Ventra, Solving mazes with memristors: a massively parallel approach. Phys. Rev. E 84, 046703 (2011)CrossRef
9.
Zurück zum Zitat Y.V. Pershin, M. Di Ventra, Self-organization and solution of shortest-path optimization problems with memristive networks. Phys. Rev. E 88, 013305 (2013)CrossRef Y.V. Pershin, M. Di Ventra, Self-organization and solution of shortest-path optimization problems with memristive networks. Phys. Rev. E 88, 013305 (2013)CrossRef
10.
Zurück zum Zitat R.K. Budhathoki, M.P. Sah, S.P. Adhikari, H. Kim, L.O. Chua, Composite behavior of multiple memristor circuits. IEEE Trans. Circuits Syst. I Reg. Papers 60(10), 2688–2700 (2013)MathSciNetCrossRefMATH R.K. Budhathoki, M.P. Sah, S.P. Adhikari, H. Kim, L.O. Chua, Composite behavior of multiple memristor circuits. IEEE Trans. Circuits Syst. I Reg. Papers 60(10), 2688–2700 (2013)MathSciNetCrossRefMATH
11.
Zurück zum Zitat Y. Pershin, V. Slipko, M. Di Ventra, Complex dynamics and scale invariance of one-dimensional memristive networks. Phys. Rev. E 87, 022116 (2013) Y. Pershin, V. Slipko, M. Di Ventra, Complex dynamics and scale invariance of one-dimensional memristive networks. Phys. Rev. E 87, 022116 (2013)
12.
Zurück zum Zitat J.R. Heath, P.J. Kuekes, G.S. Snider, R.S. Williams, A defect-tolerant computer architecture: opportunities for nanotechnology. Science 280(5370), 1716–1721 (1998)CrossRef J.R. Heath, P.J. Kuekes, G.S. Snider, R.S. Williams, A defect-tolerant computer architecture: opportunities for nanotechnology. Science 280(5370), 1716–1721 (1998)CrossRef
13.
Zurück zum Zitat I. Vourkas, G.C. Sirakoulis, A threshold-based approach for modeling memristive devices and systems, in 4th International Conference from Nanoparticles and Nanomaterials to Nanodevices and Nanosystems (IC4N), Corfu, Greece (2013) I. Vourkas, G.C. Sirakoulis, A threshold-based approach for modeling memristive devices and systems, in 4th International Conference from Nanoparticles and Nanomaterials to Nanodevices and Nanosystems (IC4N), Corfu, Greece (2013)
15.
Zurück zum Zitat I. Vourkas, G.C. Sirakoulis, Modeling memristor-based circuit networks on crossbar architectures, in Memristor Networks, ed. by A. Adamatzky, L. Chua (Springer, Switzerland, 2014), pp. 505–535CrossRef I. Vourkas, G.C. Sirakoulis, Modeling memristor-based circuit networks on crossbar architectures, in Memristor Networks, ed. by A. Adamatzky, L. Chua (Springer, Switzerland, 2014), pp. 505–535CrossRef
16.
Zurück zum Zitat I. Vourkas, G.C. Sirakoulis, On the generalization of composite memristive network structures for computational analog/digital circuits and systems. Microelectron. J. 45(11), 1380–1391 (2014)CrossRef I. Vourkas, G.C. Sirakoulis, On the generalization of composite memristive network structures for computational analog/digital circuits and systems. Microelectron. J. 45(11), 1380–1391 (2014)CrossRef
17.
Zurück zum Zitat S. Shin, K. Kim, S. Kang, Memristor applications for programmable analog ICs. IEEE Trans. Nanotechnol. 10(2), 266–274 (2011)CrossRef S. Shin, K. Kim, S. Kang, Memristor applications for programmable analog ICs. IEEE Trans. Nanotechnol. 10(2), 266–274 (2011)CrossRef
18.
Zurück zum Zitat S. Shin, K. Kim, S.M. Kang, Memristor-based fine resolution programmable resistance and its applications, in IEEE International Conference on Communications, Circuits and Systems (ICCCAS), Milpitas, CA (2009) S. Shin, K. Kim, S.M. Kang, Memristor-based fine resolution programmable resistance and its applications, in IEEE International Conference on Communications, Circuits and Systems (ICCCAS), Milpitas, CA (2009)
19.
Zurück zum Zitat F. Alibart, L. Gao, B.D. Hoskins, D.B. Strukov, High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm. Nanotechnology 23(7), 075201 (2012)CrossRef F. Alibart, L. Gao, B.D. Hoskins, D.B. Strukov, High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm. Nanotechnology 23(7), 075201 (2012)CrossRef
20.
Zurück zum Zitat I. Vourkas, G.C. Sirakoulis, A novel design and modeling paradigm for memristor-based crossbar circuits. IEEE Trans. Nanotechnol. 11(6), 1151–1159 (2012)CrossRef I. Vourkas, G.C. Sirakoulis, A novel design and modeling paradigm for memristor-based crossbar circuits. IEEE Trans. Nanotechnol. 11(6), 1151–1159 (2012)CrossRef
21.
Zurück zum Zitat I. Vourkas, A. Batsos, G.Ch. Sirakoulis, SPICE modeling of nonlinear memristive behavior. Int. J. Circ. Theor. Appl. 43(5), 553–565 (2015) I. Vourkas, A. Batsos, G.Ch. Sirakoulis, SPICE modeling of nonlinear memristive behavior. Int. J. Circ. Theor. Appl. 43(5), 553–565 (2015)
22.
Zurück zum Zitat T. Driscoll, J. Quinn, S. Klein, H.T. Kim, B.J. Kim, Y. Pershin, M. Di Ventra, D.N. Basov, Memristive adaptive filters. Appl. Phys. Lett. 97(9), 093502 (2010)CrossRef T. Driscoll, J. Quinn, S. Klein, H.T. Kim, B.J. Kim, Y. Pershin, M. Di Ventra, D.N. Basov, Memristive adaptive filters. Appl. Phys. Lett. 97(9), 093502 (2010)CrossRef
23.
Zurück zum Zitat S.-J. Lee, S.-J. Kim, K. Cho, S.-M. Kang, K. Eshraghian, Complementary resistive switch-based smart sensor search engine. IEEE Sens. 14(5), 1639–1646 (2014)CrossRef S.-J. Lee, S.-J. Kim, K. Cho, S.-M. Kang, K. Eshraghian, Complementary resistive switch-based smart sensor search engine. IEEE Sens. 14(5), 1639–1646 (2014)CrossRef
24.
Zurück zum Zitat F. Corinto, A. Ascoli, M. Gilli, Class of all i–v dynamics for memristive elements in pattern recognition systems, in IEEE International Joint Conference on Neural Networks, San Jose, CA (2011) F. Corinto, A. Ascoli, M. Gilli, Class of all i–v dynamics for memristive elements in pattern recognition systems, in IEEE International Joint Conference on Neural Networks, San Jose, CA (2011)
25.
Zurück zum Zitat E. Linn, R. Rosezin, C. Kugeler, R. Waser, Complementary resistive switches for passive nanocrossbar memories. Nat. Mater. 9(5), 403–406 (2010)CrossRef E. Linn, R. Rosezin, C. Kugeler, R. Waser, Complementary resistive switches for passive nanocrossbar memories. Nat. Mater. 9(5), 403–406 (2010)CrossRef
26.
Zurück zum Zitat T. Liu, Y. Kang, M. Verma, M.K. Orlowski, Switching characteristics of antiparallel resistive switches. IEEE Trans. Electron Device Lett. 33(3), 429–431 (2012)CrossRef T. Liu, Y. Kang, M. Verma, M.K. Orlowski, Switching characteristics of antiparallel resistive switches. IEEE Trans. Electron Device Lett. 33(3), 429–431 (2012)CrossRef
27.
Zurück zum Zitat A. Torralba, J. Galan, C. Lujan-Martinez, R.G. Carvajal, J. Ramirez-Angulo, A. Lopez-Martin, Comparison of programmable linear resistors based on quasi-floating gate MOSFETs, in IEEE Int. Symp. Circuits Syst. (ISCAS), Seattle, WA, USA (2008) A. Torralba, J. Galan, C. Lujan-Martinez, R.G. Carvajal, J. Ramirez-Angulo, A. Lopez-Martin, Comparison of programmable linear resistors based on quasi-floating gate MOSFETs, in IEEE Int. Symp. Circuits Syst. (ISCAS), Seattle, WA, USA (2008)
28.
Zurück zum Zitat E. Ozalevli, P.E. Hasler, Tunable highly linear floating-gate CMOS resistor using common-mode linearization technique. IEEE Trans. Circuits Syst. I Reg. Papers 55(4), 999–1010 (2008)MathSciNetCrossRef E. Ozalevli, P.E. Hasler, Tunable highly linear floating-gate CMOS resistor using common-mode linearization technique. IEEE Trans. Circuits Syst. I Reg. Papers 55(4), 999–1010 (2008)MathSciNetCrossRef
29.
Zurück zum Zitat L. Gao, F. Merrikh-Bayat, F. Alibart, X. Guo, B.D. Hoskins, K.-T. Cheng, D.B. Strukov, Digital-to-analog and analog-to-digital conversion with metal oxide memristors for ultra-low power computing, in IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Brooklyn, NY (2013) L. Gao, F. Merrikh-Bayat, F. Alibart, X. Guo, B.D. Hoskins, K.-T. Cheng, D.B. Strukov, Digital-to-analog and analog-to-digital conversion with metal oxide memristors for ultra-low power computing, in IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Brooklyn, NY (2013)
Metadaten
Titel
Dynamic Response of Multiple Interconnected Memristors
verfasst von
Ioannis Vourkas
Georgios Ch. Sirakoulis
Copyright-Jahr
2016
DOI
https://doi.org/10.1007/978-3-319-22647-7_3

Neuer Inhalt