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Erschienen in:
19.04.2017
Effect of Co doping on the physical properties of Sn2S3 thin film
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 15/2017
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Abstract
Cobalt doped Sn2S3 thin films with a dopant concentration of 1, 2 and 3 at. wt% have been coated on glass substrate by spray pyrolysis method and the structural, optical, electrical and magnetic properties of the film investigated. XRD pattern confirms the polycrystalline nature of the films and the preferential orientation of the crystal is along the (211) direction. The band gap energy of the undoped film is 1.77 eV and can be tailored by the addition of Co atoms. The absorption coefficient of all the films is of the order of 104 Ωcm−1 near the fundamental absorption edge and is very much suitable for photovoltaic applications. The electrical conductivity increases due to cobalt addition and is maximum for a concentration of 2 wt%. The presence of Cobalt in Sn2S3 thin film introduces ferromagnetic properties even at room temperature. Addition of Cobalt in Sn2S3 has improved its optical and electrical properties and also paved the way for its use as a dilute magnetic semiconductor (DMS).