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2016 | OriginalPaper | Buchkapitel

Effect of Defects on Current-Voltage Characteristics of a Silicene ZNR-Based Field Effect Transistor

verfasst von : E. Meher Abhinav, M. Chandra Mohan, A. Suresh Reddy, Vemana Chary, Maragani Thirupathi

Erschienen in: Proceedings of the Second International Conference on Computer and Communication Technologies

Verlag: Springer India

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Abstract

In this paper, we investigated the behavior of negative differential resistance (NDR) and analysis on various deformations like twist, wrap, and ripple/buckler and defects like vacancy and rough edge on short channel bilayer silicene zigzag nanoribbon (ZNR). Effects are caused by deformations like wrap with 5o and by rippling the channel by 0.5 Å amplitude on 6 nm silicene. FET is evaluated by density functional theory (DFT) and by nonequilibrium green’s function (NEGF) approach. We studied the I–V characteristics of deformations and defects. These characteristics of device with different conditions and mainly negative differential resistance (NDR) behavior are studied.

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Metadaten
Titel
Effect of Defects on Current-Voltage Characteristics of a Silicene ZNR-Based Field Effect Transistor
verfasst von
E. Meher Abhinav
M. Chandra Mohan
A. Suresh Reddy
Vemana Chary
Maragani Thirupathi
Copyright-Jahr
2016
Verlag
Springer India
DOI
https://doi.org/10.1007/978-81-322-2517-1_27