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Journal of Materials Science: Materials in Electronics

Erschienen in:

18.06.2019

Effect of deposition temperature of a-Si:H layer on the performance of silicon heterojunction solar cell

verfasst von: Tianyu Ruan, Minghao Qu, Jianqiang Wang, Yongcai He, Xixiang Xu, Cao Yu, Yongzhe Zhang, Hui Yan

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 14/2019

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Abstract

Substrate temperature during intrinsic hydrogenated amorphous silicon (i-a-Si:H) passivation layer deposition by plasma enhanced chemical vapor deposition (PECVD) is found to be crucial for reaching high conversion efficiency (E_ff) in a silicon heterojunction (SHJ) solar cell. Measurements from Fourier transform infrared (FTIR) and minority carrier lifetimes show that the good passivation properties of a-Si:H film deposited at lower substrate temperatures are achieved. The correlations between the optical and electrical properties of thin films and the performance of SHJ cells have been analyzed. Finally, a SHJ solar cell with an area of 242.5 cm² was prepared at 210 °C, yielding a maximum cell conversion efficiency up to 23.3% with V_OC of 741 mV, J_SC of 38.49 mA/cm² and FF of 82.0%.

Vorheriger Artikel Investigation of electrical and mechanical properties of silver-hexagonal boron nitride/EPDM composites

Nächster Artikel Co effect on the structural, chemical and frequency depended electrical properties of YbFeO3 perovskite oxide compound

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Titel: Effect of deposition temperature of a-Si:H layer on the performance of silicon heterojunction solar cell
verfasst von: Tianyu Ruan
Minghao Qu
Jianqiang Wang
Yongcai He
Xixiang Xu
Cao Yu
Yongzhe Zhang
Hui Yan
Publikationsdatum: 18.06.2019
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 14/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-019-01700-7

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