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Erschienen in:
01.01.2014
Effect of gas enhanced metal-semiconductor-metal UV photodetectors based on thermal annealing tungsten oxide thin film prepared by sol–gel method
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2014
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Abstract
Metal-semiconductor-metal ultraviolet photodetectors were fabricated on annealed tungsten oxide thin films which were synthesized by the sol–gel reaction. Surface morphology, microstructure, opto-electrical properties and crystal structure tests of the W18O49 thin films were examined by scanning electron microscopy, transmission, photoluminescence, and X-ray diffraction, respectively. The photo-responsivity of the photodetector shows a dependence on atmosphere environments. The photocurrent measured in a vacuum is about ~2 times higher than the illuminated photocurrent in air. The illumination conductance in a vacuum and in air increase by a factor of 100 compared to that in oxygen ambient. Furthermore, the obtained photoresponse curves showed significant changes in dark, under illumination, and during recovery for gas switching experiment. The solid-state process of electron-hole generation/recombination and surface effects of oxygen was discussed to explain the changes in the observed photoresponse.