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Journal of Computational Electronics

Erschienen in:

09.04.2023

Effect of introducing Al₂O₃ as a tunnelling layer into p-CBTS/n-CdS heterojunction solar cells

verfasst von: Wafaâ Henni, Wassila Leila Rahal, Djaaffar Rached, Abdelkader Boukortt

Erschienen in: Journal of Computational Electronics | Ausgabe 3/2023

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Abstract

We have studied the effect of introducing an insulating ultrathin Al₂O₃ with a very wide band gap (~ 7 eV) into a CBTS/CdS heterojunction to analyze the tunnelling effect in a Mo/MoS₂/CBTS/Al₂O₃/CdS/ZnO/AZO/Al solar cell using experimentally calibrated numerical simulation. We first investigated the intra-band tunnelling of electrons from the p-CBTS absorber to the n-CdS emitter through the insulator layer (Al₂O₃). In the second analysis set, we found that the thickness of Al₂O₃ must be sufficient (~ 3 nm) to allow the minority carrier penetration. It is shown that the CBTS/Al₂O₃/CdS structure enhances the collection efficiency in the short- and long-wavelength regions, resulting in higher performance. Indeed, with an Al₂O₃ layer between CBTS and CdS, the device exhibits efficiency of 11.89% with V_OC, J_SC, and FF of 1.08 V, 15.45 mA/cm² and 71.41%, respectively, compared to the device without Al₂O₃, which presents an efficiency of 6.75%, V_OC = 0.69 V, J_SC = 15.09 mA/cm² and FF = 64.84%. This study provides a guide to further optimise the performance of kesterite solar cells.

Vorheriger Artikel Highly efficient Cd-Free ZnMgO/CIGS solar cells via effective band-gap tuning strategy

Nächster Artikel Ternary RCS reduction metasurface based on a parallel resonance circuit

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Titel: Effect of introducing Al2O3 as a tunnelling layer into p-CBTS/n-CdS heterojunction solar cells
verfasst von: Wafaâ Henni
Wassila Leila Rahal
Djaaffar Rached
Abdelkader Boukortt
Publikationsdatum: 09.04.2023
Verlag: Springer US
Erschienen in: Journal of Computational Electronics / Ausgabe 3/2023
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-023-02031-x

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Effect of introducing Al₂O₃ as a tunnelling layer into p-CBTS/n-CdS heterojunction solar cells

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