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Erschienen in: Journal of Materials Engineering and Performance 12/2018

29.08.2018

Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition

verfasst von: Shrikant Saini, Paolo Mele, Shunsuke Osugi, Malik I. Adam

Erschienen in: Journal of Materials Engineering and Performance | Ausgabe 12/2018

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Abstract

We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.

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Metadaten
Titel
Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition
verfasst von
Shrikant Saini
Paolo Mele
Shunsuke Osugi
Malik I. Adam
Publikationsdatum
29.08.2018
Verlag
Springer US
Erschienen in
Journal of Materials Engineering and Performance / Ausgabe 12/2018
Print ISSN: 1059-9495
Elektronische ISSN: 1544-1024
DOI
https://doi.org/10.1007/s11665-018-3601-6

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