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Erschienen in:
14.07.2020
Effect of sintering atmosphere and annealing temperature on electrical and optical properties of TiO2 ceramic
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 16/2020
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Abstract
TiO2 ceramics possess excellent microwave dielectric properties, but defects have a great influence on the dielectric properties of materials. Compared with the TiO2 sintered under air(Resistivity = 109 Ω∙m, \({\varepsilon }_{r}\approx \) 78.62, 3.2 GHz), in N2 atmosphere, the TiO2 ceramic has a resistivity of 100 Ω∙m, \({\varepsilon }_{r}\approx \) 105(1 kHz), and the microwave performance degenerates. It proves that the oxygen vacancy defect formed in the anoxic environment is the main reason of the change of electrical properties. Based on the above analysis, TiO2 (N2) ceramics are annealed under air at different temperatures. As the annealing temperature increases to 1200 °C, the resistivity of TiO2 returns to 109 Ω∙m, \({\varepsilon }_{r}\approx \) 100(around 3 GHz), and the forbidden band width gradually increases to 2.86 eV from 1.42 eV, confirming the annealing treatment method can reduce the concentration of material defects, so that the electrical properties of TiO2 ceramics are better restored.