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Erschienen in:
01.11.2013
Effect of sulfurization in hydrogen sulfide on the properties of Cu(In,Ga)Se2 thin-film absorbers
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2013
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Abstract
In this research Cu(In,Ga)Se2 thin films were sulfurized in H2S–Ar gas mixture with processing temperatures ranging from 400 to 550 °C and time ranging from 10 to 60 min. The change in crystal phases, microstructure and chemical compositions of the absorber layers after sulfurization were investigated by X-ray diffraction, high resolution TEM, scanning electron microscopy, Raman scattering spectrum, energy dispersive X-ray spectrometer. In the process of sulfurization, the crystallinity and sulfurization degree of the Cu(In,Ga)(S,Se)2 films depend strongly on the sulfurization temperature. The ‘Cu–Au’ phase was found for samples grown at low sulfurization temperature and transformed to chalcopyrite-type phase at high sulfurization temperature. The Se–S vibration mode of Cu(S,Se) alloy was also observed in the Raman spectra.