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Journal of Materials Science
Erschienen in: Journal of Materials Science 13/2017

31.03.2017 | Original Paper

Effect of temperature on graphene grown by chemical vapor deposition

verfasst von: Stefanos Chaitoglou, Enric Bertran

Erschienen in: Journal of Materials Science | Ausgabe 13/2017

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Abstract

Large-area single-crystal graphene films remain a challenge which settlement will permit to take full profit of the intrinsic properties of the material in electronic application. Toward this direction, in the present work we study the effect of temperature on the chemical vapor deposition growth of graphene over copper foil, in low pressure. Graphene growth commence with the crystallization of a supersaturated fraction of carbon-adatom species, while the nucleation density is the result of competition between the mobility of the carbon-adatom species and their desorption rate. We study the nuclei size and density distribution, growth rate and coverage rate to calculate the nucleation activation energy. In addition, we provide information considering the control of the intrinsic strain present in the graphene domains as a result of the ripple formation. We study the agreement, considering the ripple formation, between the theoretical model of thermal grooving and observation made by atomic force microscopy.
Vorheriger Artikel Structural and mechanical properties of a range of chitosan-based hybrid networks loaded with colloidal silica and polystyrene particles

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Metadaten
Titel
Effect of temperature on graphene grown by chemical vapor deposition
verfasst von
Stefanos Chaitoglou
Enric Bertran
Publikationsdatum
31.03.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 13/2017
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-017-1054-1

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