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Erschienen in:
01.08.2019
Effect of ZnS, iZnO, dZnO and Cu(In,Ga)Se2 thickness on the performance of simulated Mo/Cu(In,Ga)Se2/ZnS/iZnO/dZnO solar cell
Erschienen in: Optical and Quantum Electronics | Ausgabe 8/2019
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Abstract
In this paper, Mo/Cu(In,Ga)Se2/ZnS/iZnO/dZnO solar cell is simulated and optimized by studying the effect of layers thickness on solar cell efficiency using Silvaco ATLAS software. The input simulation parameters are: dielectric permittivity \(\left(\upvarepsilon \right)\), band gap energy \(\left( {E_{g} } \right)\), electron affinity \(\left(\upchi \right)\), conduction band effective density of states \(\left( {N_{c} } \right)\), valence band effective density of states \(\left( {N_{v} } \right)\). The output parameters used to find the optimum values of the layers thickness are the short circuit current density \(\left( {I_{sc} } \right)\), open circuit voltage \(\left( {V_{oc} } \right)\), maximum power \(\left( {P_{max} } \right)\), fill factor \(\left( {\text{FF}} \right)\), efficiency \(\left(\upeta \right)\), Current–voltage (I–V) and power–voltage (P–V) characteristics.